Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods
Abstract The active channels in AlGaN/GaN‐based heterostructures are studied under different applied electrical fields to identify the Joule heating factors affecting the temperature values in the channels. The temperature in active channels of two different lengths (30 and 180 µm) is characterized...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-06-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202201330 |
| _version_ | 1827805509342724096 |
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| author | S. Vitusevich I.M. Nasieka A. V. Naumov V. V. Kalyuzhnyi O. I. Liubchenko I. O. Antypov M. I. Boyko A. E. Belyaev |
| author_facet | S. Vitusevich I.M. Nasieka A. V. Naumov V. V. Kalyuzhnyi O. I. Liubchenko I. O. Antypov M. I. Boyko A. E. Belyaev |
| author_sort | S. Vitusevich |
| collection | DOAJ |
| description | Abstract The active channels in AlGaN/GaN‐based heterostructures are studied under different applied electrical fields to identify the Joule heating factors affecting the temperature values in the channels. The temperature in active channels of two different lengths (30 and 180 µm) is characterized using optical methods, and electrical methods are used as a reference. The technique of optical thermometry is based on the data of micro‐photoluminescence and micro‐Raman experiments. The electrical method is based on the measurements of current–voltage characteristics for comparison. It is shown that photoluminescence‐ and electrical‐based temperature values demonstrate similar behavior and good correlation. The Raman‐based method, exploiting the temperature dependence of the frequency position of E2high vibrational band in GaN, shows a significant deviation compared with electrical‐ and luminescence‐based methods. This deviation is shown to be related to the residual mechanical strain in the layered structure and the formation of hot phonons. The influence of hot phonons and mechanical strain effects increases at high electrical load (>5 kV cm−1) and at high temperatures (>400 °C), respectively. |
| first_indexed | 2024-03-11T21:26:12Z |
| format | Article |
| id | doaj.art-b8624d2b47a44cd9b68bb6e867d4f0b5 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T21:26:12Z |
| publishDate | 2023-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-b8624d2b47a44cd9b68bb6e867d4f0b52023-09-28T04:47:42ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-06-0196n/an/a10.1002/aelm.202201330Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical MethodsS. Vitusevich0I.M. Nasieka1A. V. Naumov2V. V. Kalyuzhnyi3O. I. Liubchenko4I. O. Antypov5M. I. Boyko6A. E. Belyaev7Institute of Biological Information Processing (Bioelectronics (IBI‐3) Forschungszentrum Juelich D 52425 Juelich GermanyV.Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine 41 Nauki Ave 03028 Kyiv UkraineAGH University of Science and Technology Academic Centre for Materials and Nanotechnology al. Mickiewicza 30 30‐059 Krakow PolandV.Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine 41 Nauki Ave 03028 Kyiv UkraineV.Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine 41 Nauki Ave 03028 Kyiv UkraineNational University of Life and Environmental Sciences of Ukraine Education and Research Institute of Energetics Automation and Energy Efficiency 12 Heroyiv Oborony str. 03041 Kyiv UkraineV.Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine 41 Nauki Ave 03028 Kyiv UkraineV.Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine 41 Nauki Ave 03028 Kyiv UkraineAbstract The active channels in AlGaN/GaN‐based heterostructures are studied under different applied electrical fields to identify the Joule heating factors affecting the temperature values in the channels. The temperature in active channels of two different lengths (30 and 180 µm) is characterized using optical methods, and electrical methods are used as a reference. The technique of optical thermometry is based on the data of micro‐photoluminescence and micro‐Raman experiments. The electrical method is based on the measurements of current–voltage characteristics for comparison. It is shown that photoluminescence‐ and electrical‐based temperature values demonstrate similar behavior and good correlation. The Raman‐based method, exploiting the temperature dependence of the frequency position of E2high vibrational band in GaN, shows a significant deviation compared with electrical‐ and luminescence‐based methods. This deviation is shown to be related to the residual mechanical strain in the layered structure and the formation of hot phonons. The influence of hot phonons and mechanical strain effects increases at high electrical load (>5 kV cm−1) and at high temperatures (>400 °C), respectively.https://doi.org/10.1002/aelm.202201330AlGaN/GaN heterostructuresJoule self‐heatingmicro‐photoluminescencemicro‐Raman scatteringthermometry |
| spellingShingle | S. Vitusevich I.M. Nasieka A. V. Naumov V. V. Kalyuzhnyi O. I. Liubchenko I. O. Antypov M. I. Boyko A. E. Belyaev Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods Advanced Electronic Materials AlGaN/GaN heterostructures Joule self‐heating micro‐photoluminescence micro‐Raman scattering thermometry |
| title | Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods |
| title_full | Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods |
| title_fullStr | Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods |
| title_full_unstemmed | Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods |
| title_short | Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods |
| title_sort | thermometry of algan gan 2d channels at high electric fields using electrical and optical methods |
| topic | AlGaN/GaN heterostructures Joule self‐heating micro‐photoluminescence micro‐Raman scattering thermometry |
| url | https://doi.org/10.1002/aelm.202201330 |
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