Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods

Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods

Abstract The active channels in AlGaN/GaN‐based heterostructures are studied under different applied electrical fields to identify the Joule heating factors affecting the temperature values in the channels. The temperature in active channels of two different lengths (30 and 180 µm) is characterized...

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Bibliographic Details
Main Authors: S. Vitusevich, I.M. Nasieka, A. V. Naumov, V. V. Kalyuzhnyi, O. I. Liubchenko, I. O. Antypov, M. I. Boyko, A. E. Belyaev
Format: Article
Language:English
Published: Wiley-VCH 2023-06-01
Series:Advanced Electronic Materials
Subjects:
AlGaN/GaN heterostructures
Joule self‐heating
micro‐photoluminescence
micro‐Raman scattering
thermometry
Online Access:https://doi.org/10.1002/aelm.202201330

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