Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells
Wide-bandgap (WBG) perovskite solar cells (PSCs) are essential for highly efficient and stable silicon/perovskite tandem solar cells. In this study, we adopted a synthetic strategy with lead thiocyanate (Pb(SCN)2) additive and methylammonium chloride (MACl) posttreatment to enhance the crystallinity...
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| Format: | Article |
| Language: | English |
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American Association for the Advancement of Science (AAAS)
2023-01-01
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| Series: | Research |
| Online Access: | https://spj.science.org/doi/10.34133/research.0196 |
| _version_ | 1827294782632755200 |
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| author | Wenming Chai Lindong Li Weidong Zhu Dazheng Chen Long Zhou He Xi Jincheng Zhang Chunfu Zhang Yue Hao |
| author_facet | Wenming Chai Lindong Li Weidong Zhu Dazheng Chen Long Zhou He Xi Jincheng Zhang Chunfu Zhang Yue Hao |
| author_sort | Wenming Chai |
| collection | DOAJ |
| description | Wide-bandgap (WBG) perovskite solar cells (PSCs) are essential for highly efficient and stable silicon/perovskite tandem solar cells. In this study, we adopted a synthetic strategy with lead thiocyanate (Pb(SCN)2) additive and methylammonium chloride (MACl) posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 eV. The excessive PbI2 was formed at grain boundaries and converted into MAPbI3−xClx perovskites, which are utilized to form the graded heterojunction (GHJ) and compressive strain. This is beneficial for passivating nonradiative recombination defects, suppressing halide phase segregation, and facilitating carrier extraction. Subsequently, the device with GHJ delivered a champion efficiency of 20.30% and superior stability in ambient air and under 85 °C. Finally, we achieved a recorded efficiency of 30.91% for 4-terminal WBG perovskite/TOPCon tandem silicon solar cells. Our findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ. |
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| id | doaj.art-b897e154dc9a45f08b8f3203418ecff8 |
| institution | Directory Open Access Journal |
| issn | 2639-5274 |
| language | English |
| last_indexed | 2024-04-24T14:07:56Z |
| publishDate | 2023-01-01 |
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| series | Research |
| spelling | doaj.art-b897e154dc9a45f08b8f3203418ecff82024-04-03T09:45:12ZengAmerican Association for the Advancement of Science (AAAS)Research2639-52742023-01-01610.34133/research.0196Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar CellsWenming Chai0Lindong Li1Weidong Zhu2Dazheng Chen3Long Zhou4He Xi5Jincheng Zhang6Chunfu Zhang7Yue Hao8State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, Shaanxi 710071, China.Wide-bandgap (WBG) perovskite solar cells (PSCs) are essential for highly efficient and stable silicon/perovskite tandem solar cells. In this study, we adopted a synthetic strategy with lead thiocyanate (Pb(SCN)2) additive and methylammonium chloride (MACl) posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 eV. The excessive PbI2 was formed at grain boundaries and converted into MAPbI3−xClx perovskites, which are utilized to form the graded heterojunction (GHJ) and compressive strain. This is beneficial for passivating nonradiative recombination defects, suppressing halide phase segregation, and facilitating carrier extraction. Subsequently, the device with GHJ delivered a champion efficiency of 20.30% and superior stability in ambient air and under 85 °C. Finally, we achieved a recorded efficiency of 30.91% for 4-terminal WBG perovskite/TOPCon tandem silicon solar cells. Our findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.https://spj.science.org/doi/10.34133/research.0196 |
| spellingShingle | Wenming Chai Lindong Li Weidong Zhu Dazheng Chen Long Zhou He Xi Jincheng Zhang Chunfu Zhang Yue Hao Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells Research |
| title | Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells |
| title_full | Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells |
| title_fullStr | Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells |
| title_full_unstemmed | Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells |
| title_short | Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells |
| title_sort | graded heterojunction improves wide bandgap perovskite for highly efficient 4 terminal perovskite silicon tandem solar cells |
| url | https://spj.science.org/doi/10.34133/research.0196 |
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