Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors
Abstract The utilization of a zirconium oxide (ZrO2) thin film as the insulator in a metal–insulator–semiconductor (MIS) capacitor to enhance the characteristics of thin‐film transistors is investigated. Although the high crystallinity of ZrO2 is favorable to achieving higher capacitance density in...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-04-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202300883 |
| _version_ | 1797208384684949504 |
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| author | Minkyeong Nam Seungwoo Lee Hanseok Jeong Ara Yoon Jin‐Seong Park Woojin Jeon |
| author_facet | Minkyeong Nam Seungwoo Lee Hanseok Jeong Ara Yoon Jin‐Seong Park Woojin Jeon |
| author_sort | Minkyeong Nam |
| collection | DOAJ |
| description | Abstract The utilization of a zirconium oxide (ZrO2) thin film as the insulator in a metal–insulator–semiconductor (MIS) capacitor to enhance the characteristics of thin‐film transistors is investigated. Although the high crystallinity of ZrO2 is favorable to achieving higher capacitance density in metal–insulator–metal capacitors with ZrO2 thin films, it decreases the capacitance with increasing applied bias in Mo/ZrO2/InGaZnO (IGZO)‐structured MIS capacitors. Through comprehensive physical, chemical, and electrical characterizations, this study investigated the mechanism underlying the decreasing capacitance with increasing the applied bias in the accumulation state of the Mo/ZrO2/IGZO‐structured MIS capacitor depending on the crystallinity of ZrO2. Furthermore, the investigation identifies the optimal crystal structure of ZrO2 thin films for IGZO‐based MIS capacitors, highlighting the importance of forming meso‐crystalline structures in high dielectric constant (k) materials to enhance the k value and mitigating the decrease in capacitance caused by the accumulated carrier loss through grain boundaries of ZrO2. |
| first_indexed | 2024-04-24T09:37:57Z |
| format | Article |
| id | doaj.art-b8b52f41151b4e799b7ec864a1afc545 |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-04-24T09:37:57Z |
| publishDate | 2024-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-b8b52f41151b4e799b7ec864a1afc5452024-04-15T08:10:07ZengWiley-VCHAdvanced Materials Interfaces2196-73502024-04-011111n/an/a10.1002/admi.202300883Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor CapacitorsMinkyeong Nam0Seungwoo Lee1Hanseok Jeong2Ara Yoon3Jin‐Seong Park4Woojin Jeon5Department of Advanced Materials Engineering for Information and Electronics Kyung Hee University Yongin Gyeonggi 17104 South KoreaDepartment of Advanced Materials Engineering for Information and Electronics Kyung Hee University Yongin Gyeonggi 17104 South KoreaDepartment of Advanced Materials Engineering for Information and Electronics Kyung Hee University Yongin Gyeonggi 17104 South KoreaDivision of Materials Science and Engineering Hanyang University Seoul 133‐719 South KoreaDivision of Materials Science and Engineering Hanyang University Seoul 133‐719 South KoreaDepartment of Advanced Materials Engineering for Information and Electronics Kyung Hee University Yongin Gyeonggi 17104 South KoreaAbstract The utilization of a zirconium oxide (ZrO2) thin film as the insulator in a metal–insulator–semiconductor (MIS) capacitor to enhance the characteristics of thin‐film transistors is investigated. Although the high crystallinity of ZrO2 is favorable to achieving higher capacitance density in metal–insulator–metal capacitors with ZrO2 thin films, it decreases the capacitance with increasing applied bias in Mo/ZrO2/InGaZnO (IGZO)‐structured MIS capacitors. Through comprehensive physical, chemical, and electrical characterizations, this study investigated the mechanism underlying the decreasing capacitance with increasing the applied bias in the accumulation state of the Mo/ZrO2/IGZO‐structured MIS capacitor depending on the crystallinity of ZrO2. Furthermore, the investigation identifies the optimal crystal structure of ZrO2 thin films for IGZO‐based MIS capacitors, highlighting the importance of forming meso‐crystalline structures in high dielectric constant (k) materials to enhance the k value and mitigating the decrease in capacitance caused by the accumulated carrier loss through grain boundaries of ZrO2.https://doi.org/10.1002/admi.202300883crystallinityhigh‐k gate insulatorInGaZnOmetal–insulator–semiconductor capacitorZrO2 |
| spellingShingle | Minkyeong Nam Seungwoo Lee Hanseok Jeong Ara Yoon Jin‐Seong Park Woojin Jeon Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors Advanced Materials Interfaces crystallinity high‐k gate insulator InGaZnO metal–insulator–semiconductor capacitor ZrO2 |
| title | Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors |
| title_full | Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors |
| title_fullStr | Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors |
| title_full_unstemmed | Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors |
| title_short | Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors |
| title_sort | optimizing the crystallinity of a zro2 thin film insulator for ingazno based metal insulator semiconductor capacitors |
| topic | crystallinity high‐k gate insulator InGaZnO metal–insulator–semiconductor capacitor ZrO2 |
| url | https://doi.org/10.1002/admi.202300883 |
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