Ab initio calculation of band alignment of epitaxial La<sub>2</sub>O<sub>3</sub> on Si(111) substrate
By means of plane wave pseudopotential method we have studied the electronic properties of the heterostructure formed by an high dielectric constant (<em>k</em>) oxide, the hexagonal La<sub>2</sub>O<sub>3</sub> epitaxially grown with (0001)-orientation on Si (111)...
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| Format: | Article |
| Language: | English |
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AIMS Press
2015-08-01
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| Series: | AIMS Materials Science |
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| Online Access: | http://www.aimspress.com/Materials/article/404/fulltext.html |