Ab initio calculation of band alignment of epitaxial La<sub>2</sub>O<sub>3</sub> on Si(111) substrate

Ab initio calculation of band alignment of epitaxial La<sub>2</sub>O<sub>3</sub> on Si(111) substrate

By means of plane wave pseudopotential method we have studied the electronic properties of the heterostructure formed by an high dielectric constant (<em>k</em>) oxide, the hexagonal La<sub>2</sub>O<sub>3</sub> epitaxially grown with (0001)-orientation on Si (111)...

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Bibliographic Details
Main Author:	Alberto Debernardi
Format:	Article
Language:	English
Published:	AIMS Press 2015-08-01
Series:	AIMS Materials Science
Subjects:	High-<i>k</i> Oxides Lanthana Band-engineering ultra-scaled CMOS ab initio simulation
Online Access:	http://www.aimspress.com/Materials/article/404/fulltext.html

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