Determination of oscillator strength of confined excitons in a semiconductor microcavity

Determination of oscillator strength of confined excitons in a semiconductor microcavity

We have achieved a significant experimental Rabi-splitting (3.4 meV) for confined polaritons in a planar semiconductor λ microcavity for only a single quantum well (SQW) of GaAs (10 nm) placed at the antinode. The Rabi-splitting phenomena are discussed in detail based on the semiclassical theory, wh...

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Bibliographic Details
Main Authors: E.A. Cotta, P.M.S. Roma
Format: Article
Language:English
Published: Institute for Condensed Matter Physics 2014-06-01
Series:Condensed Matter Physics
Subjects:
microcavity
Rabi-splitting
polariton
oscillator-strength
strong coupling
reflectance
Online Access:http://dx.doi.org/10.5488/CMP.17.23702

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