Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg<sup>2+</sup>-Doped β-Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub> Solid Solutions Synthesized in Oxygen or Argon Atmospheres
Undoped and Mg<sup>2+</sup>-doped β-Ga<sub>2</sub>O<sub>3</sub>-20% In<sub>2</sub>O<sub>3</sub> solid solution microcrystalline samples were synthesized using the high-temperature solid-state chemical reaction method to investigate the infl...
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| author | Andriy Luchechko Vyacheslav Vasyltsiv Markiyan Kushlyk Vasyl Hreb Dmytro Slobodzyan Leonid Vasylechko Yaroslav Zhydachevskyy |
| author_facet | Andriy Luchechko Vyacheslav Vasyltsiv Markiyan Kushlyk Vasyl Hreb Dmytro Slobodzyan Leonid Vasylechko Yaroslav Zhydachevskyy |
| author_sort | Andriy Luchechko |
| collection | DOAJ |
| description | Undoped and Mg<sup>2+</sup>-doped β-Ga<sub>2</sub>O<sub>3</sub>-20% In<sub>2</sub>O<sub>3</sub> solid solution microcrystalline samples were synthesized using the high-temperature solid-state chemical reaction method to investigate the influence of native defects on structural, luminescent, and electrical properties. The synthesis process involved varying the oxygen partial pressure by synthesizing samples in either an oxygen or argon atmosphere. X-ray diffraction (XRD) analysis confirmed the monoclinic structure of the samples with the lattice parameters and unit cell volume fitting well to the general trends of the (Ga<sub>1−x</sub>In<sub>x</sub>)<sub>2</sub>O<sub>3</sub> solid solution series. Broad emission spectra ranging from 1.5 to 3.5 eV were registered for all samples. Luminescence spectra showed violet, blue, and green emission elementary bands. The luminescence intensity was found to vary depending on the synthesis atmosphere. An argon synthesis atmosphere leads to increasing violet luminescence and decreasing green luminescence. Intense bands at about 4.5 and 5.0 eV and a low-intensity band at 3.3 eV are presented in the excitation spectra. The electrical conductivity of the samples was also determined depending on the synthesis atmosphere. The high-resistance samples obtained in an oxygen atmosphere exhibited activation energy of around 0.98 eV. Samples synthesized in an argon atmosphere demonstrated several orders of magnitude higher conductivity with an activation energy of 0.15 eV. The results suggest that the synthesis atmosphere is crucial in determining the luminescent and electrical properties of undoped β-Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub> solid solution samples, offering the potential for various optoelectronic applications. |
| first_indexed | 2024-04-24T18:02:58Z |
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| id | doaj.art-b9082170c6454583845672936e43e25b |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-04-24T18:02:58Z |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-b9082170c6454583845672936e43e25b2024-03-27T13:52:43ZengMDPI AGMaterials1996-19442024-03-01176139110.3390/ma17061391Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg<sup>2+</sup>-Doped β-Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub> Solid Solutions Synthesized in Oxygen or Argon AtmospheresAndriy Luchechko0Vyacheslav Vasyltsiv1Markiyan Kushlyk2Vasyl Hreb3Dmytro Slobodzyan4Leonid Vasylechko5Yaroslav Zhydachevskyy6Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnavskogo Str., 107, 79017 Lviv, UkraineDepartment of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnavskogo Str., 107, 79017 Lviv, UkraineDepartment of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnavskogo Str., 107, 79017 Lviv, UkraineDepartment of Semiconductor Electronics, Lviv Polytechnic National University, S. Bandera Str., 12, 79013 Lviv, UkraineDepartment of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnavskogo Str., 107, 79017 Lviv, UkraineDepartment of Semiconductor Electronics, Lviv Polytechnic National University, S. Bandera Str., 12, 79013 Lviv, UkraineInstitute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, PolandUndoped and Mg<sup>2+</sup>-doped β-Ga<sub>2</sub>O<sub>3</sub>-20% In<sub>2</sub>O<sub>3</sub> solid solution microcrystalline samples were synthesized using the high-temperature solid-state chemical reaction method to investigate the influence of native defects on structural, luminescent, and electrical properties. The synthesis process involved varying the oxygen partial pressure by synthesizing samples in either an oxygen or argon atmosphere. X-ray diffraction (XRD) analysis confirmed the monoclinic structure of the samples with the lattice parameters and unit cell volume fitting well to the general trends of the (Ga<sub>1−x</sub>In<sub>x</sub>)<sub>2</sub>O<sub>3</sub> solid solution series. Broad emission spectra ranging from 1.5 to 3.5 eV were registered for all samples. Luminescence spectra showed violet, blue, and green emission elementary bands. The luminescence intensity was found to vary depending on the synthesis atmosphere. An argon synthesis atmosphere leads to increasing violet luminescence and decreasing green luminescence. Intense bands at about 4.5 and 5.0 eV and a low-intensity band at 3.3 eV are presented in the excitation spectra. The electrical conductivity of the samples was also determined depending on the synthesis atmosphere. The high-resistance samples obtained in an oxygen atmosphere exhibited activation energy of around 0.98 eV. Samples synthesized in an argon atmosphere demonstrated several orders of magnitude higher conductivity with an activation energy of 0.15 eV. The results suggest that the synthesis atmosphere is crucial in determining the luminescent and electrical properties of undoped β-Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub> solid solution samples, offering the potential for various optoelectronic applications.https://www.mdpi.com/1996-1944/17/6/1391monoclinic Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub>crystal structureluminescenceelectrical conductivitypoint defects |
| spellingShingle | Andriy Luchechko Vyacheslav Vasyltsiv Markiyan Kushlyk Vasyl Hreb Dmytro Slobodzyan Leonid Vasylechko Yaroslav Zhydachevskyy Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg<sup>2+</sup>-Doped β-Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub> Solid Solutions Synthesized in Oxygen or Argon Atmospheres Materials monoclinic Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub> crystal structure luminescence electrical conductivity point defects |
| title | Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg<sup>2+</sup>-Doped β-Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub> Solid Solutions Synthesized in Oxygen or Argon Atmospheres |
| title_full | Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg<sup>2+</sup>-Doped β-Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub> Solid Solutions Synthesized in Oxygen or Argon Atmospheres |
| title_fullStr | Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg<sup>2+</sup>-Doped β-Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub> Solid Solutions Synthesized in Oxygen or Argon Atmospheres |
| title_full_unstemmed | Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg<sup>2+</sup>-Doped β-Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub> Solid Solutions Synthesized in Oxygen or Argon Atmospheres |
| title_short | Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg<sup>2+</sup>-Doped β-Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub> Solid Solutions Synthesized in Oxygen or Argon Atmospheres |
| title_sort | crystal structure luminescence and electrical conductivity of pure and mg sup 2 sup doped β ga sub 2 sub o sub 3 sub in sub 2 sub o sub 3 sub solid solutions synthesized in oxygen or argon atmospheres |
| topic | monoclinic Ga<sub>2</sub>O<sub>3</sub>-In<sub>2</sub>O<sub>3</sub> crystal structure luminescence electrical conductivity point defects |
| url | https://www.mdpi.com/1996-1944/17/6/1391 |
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