Configuration transitions of divacancies in silicon and germanium
High-resistance samples p-Si (p0 = (1.63 - 7.09)·1011 cm-3) and n-Si (n0 = 1.19·1014 cm-3), grown by the float-ing zone melting after irradiation with fast neutron reactor at 320 C after isothermal and isochronal annealing were studied. The energy levels of divacancy in three charge states, dependi...
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| Format: | Article |
| Language: | English |
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Institute for Nuclear Research, National Academy of Sciences of Ukraine
2013-06-01
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| Series: | Âderna Fìzika ta Energetika |
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| Online Access: | http://jnpae.kinr.kiev.ua/14.2/Articles_PDF/jnpae-2013-14-0163-Dolgolenko.pdf |
| _version_ | 1818470426256343040 |
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| author | O. P. Dolgolenko |
| author_facet | O. P. Dolgolenko |
| author_sort | O. P. Dolgolenko |
| collection | DOAJ |
| description | High-resistance samples p-Si (p0 = (1.63 - 7.09)·1011 cm-3) and n-Si (n0 = 1.19·1014 cm-3), grown by the float-ing zone melting after irradiation with fast neutron reactor at 320 C after isothermal and isochronal annealing were studied. The energy levels of divacancy in three charge states, depending on its configuration are deter-mined. Values of the energy levels of divacancies and A - center after their modification background impurities are considered. |
| first_indexed | 2024-04-13T21:37:24Z |
| format | Article |
| id | doaj.art-b923a474e9f149beba51b6c91da3db31 |
| institution | Directory Open Access Journal |
| issn | 1818-331X 2074-0565 |
| language | English |
| last_indexed | 2024-04-13T21:37:24Z |
| publishDate | 2013-06-01 |
| publisher | Institute for Nuclear Research, National Academy of Sciences of Ukraine |
| record_format | Article |
| series | Âderna Fìzika ta Energetika |
| spelling | doaj.art-b923a474e9f149beba51b6c91da3db312022-12-22T02:28:55ZengInstitute for Nuclear Research, National Academy of Sciences of UkraineÂderna Fìzika ta Energetika1818-331X2074-05652013-06-01142163171Configuration transitions of divacancies in silicon and germaniumO. P. Dolgolenko0Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, UkraineHigh-resistance samples p-Si (p0 = (1.63 - 7.09)·1011 cm-3) and n-Si (n0 = 1.19·1014 cm-3), grown by the float-ing zone melting after irradiation with fast neutron reactor at 320 C after isothermal and isochronal annealing were studied. The energy levels of divacancy in three charge states, depending on its configuration are deter-mined. Values of the energy levels of divacancies and A - center after their modification background impurities are considered.http://jnpae.kinr.kiev.ua/14.2/Articles_PDF/jnpae-2013-14-0163-Dolgolenko.pdfsilicongermaniumfast neutrondivacancy |
| spellingShingle | O. P. Dolgolenko Configuration transitions of divacancies in silicon and germanium Âderna Fìzika ta Energetika silicon germanium fast neutron divacancy |
| title | Configuration transitions of divacancies in silicon and germanium |
| title_full | Configuration transitions of divacancies in silicon and germanium |
| title_fullStr | Configuration transitions of divacancies in silicon and germanium |
| title_full_unstemmed | Configuration transitions of divacancies in silicon and germanium |
| title_short | Configuration transitions of divacancies in silicon and germanium |
| title_sort | configuration transitions of divacancies in silicon and germanium |
| topic | silicon germanium fast neutron divacancy |
| url | http://jnpae.kinr.kiev.ua/14.2/Articles_PDF/jnpae-2013-14-0163-Dolgolenko.pdf |
| work_keys_str_mv | AT opdolgolenko configurationtransitionsofdivacanciesinsiliconandgermanium |