Investigation of threshold voltage shift and gate leakage mechanisms in normally off AlN/Al0.05Ga0.95N HEMTs on Si substrate
In this study, normally off AlN/Al0.05Ga0.95N high-electron-mobility transistors (HEMTs) on a Si substrate were fabricated by adjusting the surface states of the heterostructure. The device exhibited an extremely low reverse gate leakage current of 10−7 mA/mm due to the high Schottky-barrier height...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0030299 |