Charge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructures

Cation stoichiometry has been identified as a major key in establishing 2-dimensional electron gases (2DEGs) in oxide heterostructures. Here, we discuss a 2DEG formation scenario in B-site deficient perovskite/perovskite heterostructures, which previously were predicted to show insulating behavior....

Full description

Bibliographic Details
Main Authors: F. Gunkel, C. Lenser, C. Baeumer, F. Borgatti, F. Offi, G. Panaccione, R. Dittmann
Format: Article
Language:English
Published: AIP Publishing LLC 2018-07-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5038773
_version_ 1828749253051154432
author F. Gunkel
C. Lenser
C. Baeumer
F. Borgatti
F. Offi
G. Panaccione
R. Dittmann
author_facet F. Gunkel
C. Lenser
C. Baeumer
F. Borgatti
F. Offi
G. Panaccione
R. Dittmann
author_sort F. Gunkel
collection DOAJ
description Cation stoichiometry has been identified as a major key in establishing 2-dimensional electron gases (2DEGs) in oxide heterostructures. Here, we discuss a 2DEG formation scenario in B-site deficient perovskite/perovskite heterostructures, which previously were predicted to show insulating behavior. We elaborate an ionic picture based on oxygen-vacancy-buffered B-site vacancy defects in the polar oxide layer that yields a continuous transition from 2DEG formation to less conducting interfaces to insulating interfaces with increasing B-site deficiency. Experimentally, a corresponding modulation of charge transfer across NdGaO3/SrTiO3 interfaces is inferred using hard x-ray photoelectron spectroscopy analysis and transport experiments. With increasing B-site deficiency, we observe a decrease of the interfacial Ti3+ core level contribution, indicating a reduced charge transfer at the interface. This result is corroborated by temperature-dependent transport measurements, revealing increased low temperature resistance, with a dominant influence of a reduced electron density in the Ga-depleted sample. We consider a redistribution of oxygen vacancies in the B-site deficient polar oxide layer to explain the alleviated interface reconstruction, adding a new perspective on potential built-up in polar-oxide thin films.
first_indexed 2024-12-10T14:27:29Z
format Article
id doaj.art-b9cadf086811410b813c7974893b597c
institution Directory Open Access Journal
issn 2166-532X
language English
last_indexed 2024-12-10T14:27:29Z
publishDate 2018-07-01
publisher AIP Publishing LLC
record_format Article
series APL Materials
spelling doaj.art-b9cadf086811410b813c7974893b597c2022-12-22T01:45:03ZengAIP Publishing LLCAPL Materials2166-532X2018-07-0167076104076104-910.1063/1.5038773006807APMCharge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructuresF. Gunkel0C. Lenser1C. Baeumer2F. Borgatti3F. Offi4G. Panaccione5R. Dittmann6Institute of Electronic Materials (IWE2), RWTH Aachen University, Aachen, GermanyIEK-1, Forschungszentrum Jülich, 52425 Jülich, GermanyJülich-Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT), Aachen, GermanyCNR–Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P. Gobetti 101, I-40129 Bologna, ItalyCNISM and Dipartimento di Scienze, Università di Roma Tre, Via della Vasca Navale 84, 00146 Rome, ItalyCNR–Istituto Officina dei Materiali (IOM), Laboratorio TASC, S.S. 14 Km 163.5, AREA Science Park, Basovizza, 34149 Trieste, ItalyJülich-Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT), Aachen, GermanyCation stoichiometry has been identified as a major key in establishing 2-dimensional electron gases (2DEGs) in oxide heterostructures. Here, we discuss a 2DEG formation scenario in B-site deficient perovskite/perovskite heterostructures, which previously were predicted to show insulating behavior. We elaborate an ionic picture based on oxygen-vacancy-buffered B-site vacancy defects in the polar oxide layer that yields a continuous transition from 2DEG formation to less conducting interfaces to insulating interfaces with increasing B-site deficiency. Experimentally, a corresponding modulation of charge transfer across NdGaO3/SrTiO3 interfaces is inferred using hard x-ray photoelectron spectroscopy analysis and transport experiments. With increasing B-site deficiency, we observe a decrease of the interfacial Ti3+ core level contribution, indicating a reduced charge transfer at the interface. This result is corroborated by temperature-dependent transport measurements, revealing increased low temperature resistance, with a dominant influence of a reduced electron density in the Ga-depleted sample. We consider a redistribution of oxygen vacancies in the B-site deficient polar oxide layer to explain the alleviated interface reconstruction, adding a new perspective on potential built-up in polar-oxide thin films.http://dx.doi.org/10.1063/1.5038773
spellingShingle F. Gunkel
C. Lenser
C. Baeumer
F. Borgatti
F. Offi
G. Panaccione
R. Dittmann
Charge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructures
APL Materials
title Charge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructures
title_full Charge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructures
title_fullStr Charge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructures
title_full_unstemmed Charge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructures
title_short Charge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructures
title_sort charge transfer in b site depleted ndgao3 srtio3 heterostructures
url http://dx.doi.org/10.1063/1.5038773
work_keys_str_mv AT fgunkel chargetransferinbsitedepletedndgao3srtio3heterostructures
AT clenser chargetransferinbsitedepletedndgao3srtio3heterostructures
AT cbaeumer chargetransferinbsitedepletedndgao3srtio3heterostructures
AT fborgatti chargetransferinbsitedepletedndgao3srtio3heterostructures
AT foffi chargetransferinbsitedepletedndgao3srtio3heterostructures
AT gpanaccione chargetransferinbsitedepletedndgao3srtio3heterostructures
AT rdittmann chargetransferinbsitedepletedndgao3srtio3heterostructures