Tunable Schottky barrier in van der Waals heterojunction composed of graphene and SiCP4 from first principle calculations
The contact type between graphene and semiconducting two-dimensional materials is a crucial factor in determining the performance of nanoscale electronic devices based on two-dimensional materials. Recently, SiCP4 is proposed to have high charge mobility plus high stability. In this work, we study t...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-01-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379722008105 |
| _version_ | 1797950754251603968 |
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| author | Shaofeng Zhang Zhaowu Wang |
| author_facet | Shaofeng Zhang Zhaowu Wang |
| author_sort | Shaofeng Zhang |
| collection | DOAJ |
| description | The contact type between graphene and semiconducting two-dimensional materials is a crucial factor in determining the performance of nanoscale electronic devices based on two-dimensional materials. Recently, SiCP4 is proposed to have high charge mobility plus high stability. In this work, we study the contact type between graphene and SiCP4. The Schottky barrier is formed between graphene and SiCP4. By changing the interlayer distance, the Schottky barrier can be tuned in a wide range. The charge transfer at the interface induces a reverse shift between the bands of graphene and SiCP4. The amount of charge transfer can be used to explain the change in the Schottky barrier. Furthermore, the Schottky barrier can be controlled by applying a vertical electric field. The tunable Schottky barrier provides a guide for the design of the nanodevice based on graphene and SiCP4. |
| first_indexed | 2024-04-10T22:20:09Z |
| format | Article |
| id | doaj.art-b9ce34a14a90417a85899eed81d9c48e |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-04-10T22:20:09Z |
| publishDate | 2023-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-b9ce34a14a90417a85899eed81d9c48e2023-01-18T04:30:45ZengElsevierResults in Physics2211-37972023-01-0144106189Tunable Schottky barrier in van der Waals heterojunction composed of graphene and SiCP4 from first principle calculationsShaofeng Zhang0Zhaowu Wang1School of Physics and Engineering, Longmen Laboratory, Henan University of Science and Technology, Luoyang 471023, ChinaSchool of Physics and Engineering, Longmen Laboratory, Henan University of Science and Technology, Luoyang 471023, China; School of Science, Hebei University of Technology, Tianjin 300401, China; Corresponding author at: School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China.The contact type between graphene and semiconducting two-dimensional materials is a crucial factor in determining the performance of nanoscale electronic devices based on two-dimensional materials. Recently, SiCP4 is proposed to have high charge mobility plus high stability. In this work, we study the contact type between graphene and SiCP4. The Schottky barrier is formed between graphene and SiCP4. By changing the interlayer distance, the Schottky barrier can be tuned in a wide range. The charge transfer at the interface induces a reverse shift between the bands of graphene and SiCP4. The amount of charge transfer can be used to explain the change in the Schottky barrier. Furthermore, the Schottky barrier can be controlled by applying a vertical electric field. The tunable Schottky barrier provides a guide for the design of the nanodevice based on graphene and SiCP4.http://www.sciencedirect.com/science/article/pii/S2211379722008105Schottky contactVan der Waals heterojunctionTwo-dimensional materialsGrapheneSiCP4Density functional theory |
| spellingShingle | Shaofeng Zhang Zhaowu Wang Tunable Schottky barrier in van der Waals heterojunction composed of graphene and SiCP4 from first principle calculations Results in Physics Schottky contact Van der Waals heterojunction Two-dimensional materials Graphene SiCP4 Density functional theory |
| title | Tunable Schottky barrier in van der Waals heterojunction composed of graphene and SiCP4 from first principle calculations |
| title_full | Tunable Schottky barrier in van der Waals heterojunction composed of graphene and SiCP4 from first principle calculations |
| title_fullStr | Tunable Schottky barrier in van der Waals heterojunction composed of graphene and SiCP4 from first principle calculations |
| title_full_unstemmed | Tunable Schottky barrier in van der Waals heterojunction composed of graphene and SiCP4 from first principle calculations |
| title_short | Tunable Schottky barrier in van der Waals heterojunction composed of graphene and SiCP4 from first principle calculations |
| title_sort | tunable schottky barrier in van der waals heterojunction composed of graphene and sicp4 from first principle calculations |
| topic | Schottky contact Van der Waals heterojunction Two-dimensional materials Graphene SiCP4 Density functional theory |
| url | http://www.sciencedirect.com/science/article/pii/S2211379722008105 |
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