Transmission and nanohardness studies of ternary GaAs1-xPx layers grown from the vapor phase by heteroepitaxy
Transmission measurements in the 0.5–25-μm spectral range are performed on thin (<350-μm) GaAsP layers grown by Hydride Vapor Phase Epitaxy (HVPE) on plain (100) GaAs substrates. Comparison with calculations taking into account multiple reflections reveals the role of the surface polishing qualit...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-05-01
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| Series: | Optical Materials: X |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590147824000251 |
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| author | Valentin Petrov Li Wang Ginka Exner Shivashankar R. Vangala Aleksandar Grigorov Elizabeth Ivanova Peter G. Schunemann Vladimir L. Tassev |
| author_facet | Valentin Petrov Li Wang Ginka Exner Shivashankar R. Vangala Aleksandar Grigorov Elizabeth Ivanova Peter G. Schunemann Vladimir L. Tassev |
| author_sort | Valentin Petrov |
| collection | DOAJ |
| description | Transmission measurements in the 0.5–25-μm spectral range are performed on thin (<350-μm) GaAsP layers grown by Hydride Vapor Phase Epitaxy (HVPE) on plain (100) GaAs substrates. Comparison with calculations taking into account multiple reflections reveals the role of the surface polishing quality on the clear transmission window and the wavelength dependent losses. A measurement of a 5-mm thick epitaxially grown GaP underlines more realistic spectral limitations on the application of orientation-patterned structures based on GaP and GaAsP for nonlinear optical frequency conversion. The mid-IR cut-off wavelength for the ternary GaAsP layers is almost independent of the composition and corresponds to the same two-phonon absorption limit observed in the binary GaP. Nanohardness and Young's modulus are measured for the same samples to evaluate their compositional dependence. The nanohardness dependence on the P-content obeys a second order polynomial law with a maximum around P = 0.8. Young's modulus depends linearly on the P-content, similar to the trend observed in other ternary systems, such as InxGa1−xAs and InxGa1-xP. The evolution of the band-gap, estimated from the transmission measurements, with the composition of the ternary compounds is linear in the range of 0–0.5 for the P content. In this same range the nanohardness can be considered to be linearly proportional to the band-gap. |
| first_indexed | 2024-04-24T16:06:49Z |
| format | Article |
| id | doaj.art-b9ebc2f17b8e43f1b11943adc30ac449 |
| institution | Directory Open Access Journal |
| issn | 2590-1478 |
| language | English |
| last_indexed | 2024-04-24T16:06:49Z |
| publishDate | 2024-05-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Optical Materials: X |
| spelling | doaj.art-b9ebc2f17b8e43f1b11943adc30ac4492024-04-01T04:04:32ZengElsevierOptical Materials: X2590-14782024-05-0122100313Transmission and nanohardness studies of ternary GaAs1-xPx layers grown from the vapor phase by heteroepitaxyValentin Petrov0Li Wang1Ginka Exner2Shivashankar R. Vangala3Aleksandar Grigorov4Elizabeth Ivanova5Peter G. Schunemann6Vladimir L. Tassev7Max Born Institute for Nonlinear Optics and Ultrafast Spectroscopy, Max-Born-Str. 2a, 12489, Berlin, Germany; Corresponding author.Max Born Institute for Nonlinear Optics and Ultrafast Spectroscopy, Max-Born-Str. 2a, 12489, Berlin, GermanyDepartment of Physics, Faculty of Physics and Technology, Plovdiv University Paisii Hilendarski, 24 Tsar Asen Str., 4000, Plovdiv, BulgariaAir Force Research Laboratory, Wright Patterson AFB, OH, 45433, USADepartment of Physics, Faculty of Physics and Technology, Plovdiv University Paisii Hilendarski, 24 Tsar Asen Str., 4000, Plovdiv, BulgariaDepartment of Physics, Faculty of Physics and Technology, Plovdiv University Paisii Hilendarski, 24 Tsar Asen Str., 4000, Plovdiv, BulgariaBAE Systems, P.O. Box 868, MER15-1813, Nashua, NH03061-0868, USAAir Force Research Laboratory, Wright Patterson AFB, OH, 45433, USATransmission measurements in the 0.5–25-μm spectral range are performed on thin (<350-μm) GaAsP layers grown by Hydride Vapor Phase Epitaxy (HVPE) on plain (100) GaAs substrates. Comparison with calculations taking into account multiple reflections reveals the role of the surface polishing quality on the clear transmission window and the wavelength dependent losses. A measurement of a 5-mm thick epitaxially grown GaP underlines more realistic spectral limitations on the application of orientation-patterned structures based on GaP and GaAsP for nonlinear optical frequency conversion. The mid-IR cut-off wavelength for the ternary GaAsP layers is almost independent of the composition and corresponds to the same two-phonon absorption limit observed in the binary GaP. Nanohardness and Young's modulus are measured for the same samples to evaluate their compositional dependence. The nanohardness dependence on the P-content obeys a second order polynomial law with a maximum around P = 0.8. Young's modulus depends linearly on the P-content, similar to the trend observed in other ternary systems, such as InxGa1−xAs and InxGa1-xP. The evolution of the band-gap, estimated from the transmission measurements, with the composition of the ternary compounds is linear in the range of 0–0.5 for the P content. In this same range the nanohardness can be considered to be linearly proportional to the band-gap.http://www.sciencedirect.com/science/article/pii/S2590147824000251 |
| spellingShingle | Valentin Petrov Li Wang Ginka Exner Shivashankar R. Vangala Aleksandar Grigorov Elizabeth Ivanova Peter G. Schunemann Vladimir L. Tassev Transmission and nanohardness studies of ternary GaAs1-xPx layers grown from the vapor phase by heteroepitaxy Optical Materials: X |
| title | Transmission and nanohardness studies of ternary GaAs1-xPx layers grown from the vapor phase by heteroepitaxy |
| title_full | Transmission and nanohardness studies of ternary GaAs1-xPx layers grown from the vapor phase by heteroepitaxy |
| title_fullStr | Transmission and nanohardness studies of ternary GaAs1-xPx layers grown from the vapor phase by heteroepitaxy |
| title_full_unstemmed | Transmission and nanohardness studies of ternary GaAs1-xPx layers grown from the vapor phase by heteroepitaxy |
| title_short | Transmission and nanohardness studies of ternary GaAs1-xPx layers grown from the vapor phase by heteroepitaxy |
| title_sort | transmission and nanohardness studies of ternary gaas1 xpx layers grown from the vapor phase by heteroepitaxy |
| url | http://www.sciencedirect.com/science/article/pii/S2590147824000251 |
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