Electrical model of the 90 nm MOSFET

Electrical model of the 90 nm MOSFET

The technique of extraction and identification of electrical models parameters for nanoscale semiconductor devices based on optimization methods application is developed. The proposed approach efficiency to identification, extraction and optimization of parameters of semiconductor devices electrical...

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Bibliographic Details
Main Authors: A. M. Borovik, V. T. Khanko, V. R. Stempitsky
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
electrical model
parameters extraction
optimization
nanoscale mosfet
Online Access:https://doklady.bsuir.by/jour/article/view/864

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