| Summary: | The application of semiconductor photocatalysts with narrow band gaps is hindered by the rapid recombination of electron–hole pairs and limitation of multiple reactive oxygen species (ROS) synchronous generation. A n–n-type direct Z-scheme heterostructured photocatalyst was constructed based on the staggered band alignment of bismuth tungstate (Bi<sub>2</sub>WO<sub>6</sub>) and indium zinc sulfide (ZnIn<sub>2</sub>S<sub>4</sub>) to reveal the synergistic effect of charge separation and multiple ROS synchronous generation on boosting photocatalytic performance. Under irradiation, electrons in the conduction band (CB) of Bi<sub>2</sub>WO<sub>6</sub> and holes in the valence band (VB) of ZnIn<sub>2</sub>S<sub>4</sub> recombined at interface to prolong the lifetime of electrons in the CB of ZnIn<sub>2</sub>S<sub>4</sub> and holes in the VB of Bi<sub>2</sub>WO<sub>6</sub>. Meanwhile, the multiple ROS synchronously generated to oxidize pollutant due to the strong redox ability of electrons of ZnIn<sub>2</sub>S<sub>4</sub> and holes of Bi<sub>2</sub>WO<sub>6</sub>, which was determined by the CB potential of ZnIn<sub>2</sub>S<sub>4</sub> and VB potential of Bi<sub>2</sub>WO<sub>6</sub>. The results provided valuable insights for the application of photocatalysts with a narrow band gap in the field of water pollution control.
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