One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma
This paper presents the dry etching characteristics of indium tin oxide (ITO)/Ag/ITO multilayered thin film, used as a pixel electrode in a high-resolution active-matrix organic light-emitting diode (AMOLED) device. Dry etching was performed using a combination of H<sub>2</sub> and HCl g...
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2021-04-01
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| Online Access: | https://www.mdpi.com/1996-1944/14/8/2025 |
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| author | Ho-Won Yoon Seung-Min Shin Seong-Yong Kwon Hyun-Min Cho Sang-Gab Kim Mun-Pyo Hong |
| author_facet | Ho-Won Yoon Seung-Min Shin Seong-Yong Kwon Hyun-Min Cho Sang-Gab Kim Mun-Pyo Hong |
| author_sort | Ho-Won Yoon |
| collection | DOAJ |
| description | This paper presents the dry etching characteristics of indium tin oxide (ITO)/Ag/ITO multilayered thin film, used as a pixel electrode in a high-resolution active-matrix organic light-emitting diode (AMOLED) device. Dry etching was performed using a combination of H<sub>2</sub> and HCl gases in a reactive ion etching system with a remote electron cyclotron resonance (ECR) plasma source, in order to achieve high electron temperature. The effect of the gas ratio (H<sub>2</sub>/HCl) was closely observed, in order to achieve an optimal etch profile and an effective etch process, while other parameters—such as the radio frequency (RF) power, ECR power, chamber pressure, and temperature—were fixed. The optimized process, with an appropriate gas ratio, constitutes a one-step serial dry etch solution for ITO and Ag multilayered thin films. |
| first_indexed | 2024-03-10T12:13:45Z |
| format | Article |
| id | doaj.art-ba2dbab553d64928b2fd74d821529c67 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T12:13:45Z |
| publishDate | 2021-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-ba2dbab553d64928b2fd74d821529c672023-11-21T16:00:43ZengMDPI AGMaterials1996-19442021-04-01148202510.3390/ma14082025One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature PlasmaHo-Won Yoon0Seung-Min Shin1Seong-Yong Kwon2Hyun-Min Cho3Sang-Gab Kim4Mun-Pyo Hong5Department of Applied Physics, Korea University, 2511 Sejong-ro, Sejong 30019, KoreaDepartment of Applied Physics, Korea University, 2511 Sejong-ro, Sejong 30019, KoreaDepartment of Applied Physics, Korea University, 2511 Sejong-ro, Sejong 30019, KoreaProcess Research Team, Samsung Display, 1, Samsung-ro, Giheung-gu, Yongin-si 17113, KoreaProcess Research Team, Samsung Display, 1, Samsung-ro, Giheung-gu, Yongin-si 17113, KoreaDepartment of Applied Physics, Korea University, 2511 Sejong-ro, Sejong 30019, KoreaThis paper presents the dry etching characteristics of indium tin oxide (ITO)/Ag/ITO multilayered thin film, used as a pixel electrode in a high-resolution active-matrix organic light-emitting diode (AMOLED) device. Dry etching was performed using a combination of H<sub>2</sub> and HCl gases in a reactive ion etching system with a remote electron cyclotron resonance (ECR) plasma source, in order to achieve high electron temperature. The effect of the gas ratio (H<sub>2</sub>/HCl) was closely observed, in order to achieve an optimal etch profile and an effective etch process, while other parameters—such as the radio frequency (RF) power, ECR power, chamber pressure, and temperature—were fixed. The optimized process, with an appropriate gas ratio, constitutes a one-step serial dry etch solution for ITO and Ag multilayered thin films.https://www.mdpi.com/1996-1944/14/8/2025ITO/Ag/ITO multilayerone-step dry etchH<sub>2</sub>/HCl gasECR-RIETE-OLED |
| spellingShingle | Ho-Won Yoon Seung-Min Shin Seong-Yong Kwon Hyun-Min Cho Sang-Gab Kim Mun-Pyo Hong One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma Materials ITO/Ag/ITO multilayer one-step dry etch H<sub>2</sub>/HCl gas ECR-RIE TE-OLED |
| title | One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma |
| title_full | One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma |
| title_fullStr | One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma |
| title_full_unstemmed | One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma |
| title_short | One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma |
| title_sort | one step etching characteristics of ito ag ito multilayered electrode in high density and high electron temperature plasma |
| topic | ITO/Ag/ITO multilayer one-step dry etch H<sub>2</sub>/HCl gas ECR-RIE TE-OLED |
| url | https://www.mdpi.com/1996-1944/14/8/2025 |
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