Mn- and Yb-Doped BaTiO<sub>3</sub>-(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub> Ferroelectric Relaxor with Low Dielectric Loss
In this work, a Mn-and Yb-doped BaTiO<sub>3</sub>-(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub> ferroelectric relaxor was designed and prepared. The effects of Mn on the microstructures, dielectric and electrical properties of the ceramics were inv...
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MDPI AG
2023-03-01
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| Online Access: | https://www.mdpi.com/1996-1944/16/6/2229 |
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| author | Dong-Yun Gui Xiao-Yong Ma Hu-Die Yuan Chun-Hai Wang |
| author_facet | Dong-Yun Gui Xiao-Yong Ma Hu-Die Yuan Chun-Hai Wang |
| author_sort | Dong-Yun Gui |
| collection | DOAJ |
| description | In this work, a Mn-and Yb-doped BaTiO<sub>3</sub>-(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub> ferroelectric relaxor was designed and prepared. The effects of Mn on the microstructures, dielectric and electrical properties of the ceramics were investigated. The X-ray structural analysis shows a perovskite structure. The SEM images show the homogeneous microstructure of ceramics with an average grain size of about 1 μm. The temperature-dependent permittivity shows relaxor characteristics as Mn-doped. Mn at a low level (x ≤ 0.005) is beneficial for low dielectric loss and high resistivity. The maximum resistivity of ≥3 × 10<sup>12</sup> Ω cm and minimum dielectric loss of ≤0.06 can be achieved at <i>x</i> ≤ 0.005. The resistivity of the ceramics follows the Arrhenius law with activation energy decreasing from ~1.31 to 1.01 eV as <i>x</i> increases. With lower Mn dopant, oxygen vacancies and charge carrier concentration partially decrease with Mn doping, which is helpful to improve the insulation resistance and decrease the dielectric loss. |
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| id | doaj.art-ba49c44fcd3c4fb292fbde59230379ea |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-11T06:15:36Z |
| publishDate | 2023-03-01 |
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| spelling | doaj.art-ba49c44fcd3c4fb292fbde59230379ea2023-11-17T12:19:16ZengMDPI AGMaterials1996-19442023-03-01166222910.3390/ma16062229Mn- and Yb-Doped BaTiO<sub>3</sub>-(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub> Ferroelectric Relaxor with Low Dielectric LossDong-Yun Gui0Xiao-Yong Ma1Hu-Die Yuan2Chun-Hai Wang3College of Materials Science and Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, ChinaState Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, ChinaCollege of Materials Science and Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, ChinaState Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, ChinaIn this work, a Mn-and Yb-doped BaTiO<sub>3</sub>-(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub> ferroelectric relaxor was designed and prepared. The effects of Mn on the microstructures, dielectric and electrical properties of the ceramics were investigated. The X-ray structural analysis shows a perovskite structure. The SEM images show the homogeneous microstructure of ceramics with an average grain size of about 1 μm. The temperature-dependent permittivity shows relaxor characteristics as Mn-doped. Mn at a low level (x ≤ 0.005) is beneficial for low dielectric loss and high resistivity. The maximum resistivity of ≥3 × 10<sup>12</sup> Ω cm and minimum dielectric loss of ≤0.06 can be achieved at <i>x</i> ≤ 0.005. The resistivity of the ceramics follows the Arrhenius law with activation energy decreasing from ~1.31 to 1.01 eV as <i>x</i> increases. With lower Mn dopant, oxygen vacancies and charge carrier concentration partially decrease with Mn doping, which is helpful to improve the insulation resistance and decrease the dielectric loss.https://www.mdpi.com/1996-1944/16/6/2229BaTiO<sub>3</sub>relaxor ferroelectricscomplex impedance and modulusdielectric loss |
| spellingShingle | Dong-Yun Gui Xiao-Yong Ma Hu-Die Yuan Chun-Hai Wang Mn- and Yb-Doped BaTiO<sub>3</sub>-(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub> Ferroelectric Relaxor with Low Dielectric Loss Materials BaTiO<sub>3</sub> relaxor ferroelectrics complex impedance and modulus dielectric loss |
| title | Mn- and Yb-Doped BaTiO<sub>3</sub>-(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub> Ferroelectric Relaxor with Low Dielectric Loss |
| title_full | Mn- and Yb-Doped BaTiO<sub>3</sub>-(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub> Ferroelectric Relaxor with Low Dielectric Loss |
| title_fullStr | Mn- and Yb-Doped BaTiO<sub>3</sub>-(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub> Ferroelectric Relaxor with Low Dielectric Loss |
| title_full_unstemmed | Mn- and Yb-Doped BaTiO<sub>3</sub>-(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub> Ferroelectric Relaxor with Low Dielectric Loss |
| title_short | Mn- and Yb-Doped BaTiO<sub>3</sub>-(Na<sub>0.5</sub>Bi<sub>0.5</sub>)TiO<sub>3</sub> Ferroelectric Relaxor with Low Dielectric Loss |
| title_sort | mn and yb doped batio sub 3 sub na sub 0 5 sub bi sub 0 5 sub tio sub 3 sub ferroelectric relaxor with low dielectric loss |
| topic | BaTiO<sub>3</sub> relaxor ferroelectrics complex impedance and modulus dielectric loss |
| url | https://www.mdpi.com/1996-1944/16/6/2229 |
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