Avalanche Photodiodes with Dual Multiplication Layers for High-Speed and Wide Dynamic Range Performances
In this work, we demonstrate In<sub>0.52</sub>Al<sub>0.48</sub>As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type In&...
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| Format: | Article |
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MDPI AG
2021-03-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/8/4/98 |
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| author | Naseem Zohauddin Ahmad Yan-Min Liao Rui-Lin Chao Po-Shun Wang Yi-Shan Lee Sean Yang Sheng-Yun Wang Hsiang-Szu Chang Hung-Shiang Chen Jack Jia-Sheng Huang Emin Chou Yu-Heng Jan Jin-Wei Shi |
| author_facet | Naseem Zohauddin Ahmad Yan-Min Liao Rui-Lin Chao Po-Shun Wang Yi-Shan Lee Sean Yang Sheng-Yun Wang Hsiang-Szu Chang Hung-Shiang Chen Jack Jia-Sheng Huang Emin Chou Yu-Heng Jan Jin-Wei Shi |
| author_sort | Naseem |
| collection | DOAJ |
| description | In this work, we demonstrate In<sub>0.52</sub>Al<sub>0.48</sub>As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type In<sub>0.53</sub>Ga<sub>0.47</sub>As absorber layer and thin In<sub>0.52</sub>Al<sub>0.48</sub>As dual multiplication (M-) layer (60 and 88 nm), exhibit a wide optical-to-electrical bandwidth (16 GHz) with high responsivity (2.5 A/W) under strong light illumination (around 1 mW). The measured bias dependent 3-dB O-E bandwidth was pinned at 16 GHz without any serious degradation near the saturation current output. To further increase the speed, we downscaled the active diameter and adopted a back-side illuminated structure with flip-chip bonding for batter optical alignment tolerance. A significant improvement in maximum bandwidth was demonstrated (25 versus 18 GHz). On the other hand, we adopted a thick dual M-layer (200 and 300 nm) and 2 μm absorber layer in the APD design to circumvent the problem of serious bandwidth degradation under high gain (>100) and high-power operation which significantly enhanced the dynamic range. Due to dual M-layer, the carriers could be energized in the first M-layer then propagate to the second M-layer to trigger the avalanche process. In both cases, despite variation in thickness of the absorber and M-layer, the cascade avalanche process leads to values close to the ultra-high gain bandwidth product (GBP) of around 460 GHz with a responsivity of 0.4 and 1 A/W at unit gain for the thin and thick M-layer devices, respectively. We successfully achieved a good sensitivity of around −20.6 dBm optical modulation amplitude (OMA) at a data rate of 25.78 Gb/s, by packaging the fabricated APDs (thin dual M-layer (60 and 88 nm) version) with a 25 Gb/s trans-impedance amplifier in a 100 Gb/s ROSA package. The results show that, the incorporation of a dual multiplication (M) layer structure in the APD opens a new window to obtaining the higher GBP in order to meet the requirements for high-speed transmission without the need of further downscaling the multiplication layer. |
| first_indexed | 2024-03-10T12:44:51Z |
| format | Article |
| id | doaj.art-ba4f992a877141209d623481cb3d3b35 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-10T12:44:51Z |
| publishDate | 2021-03-01 |
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| record_format | Article |
| series | Photonics |
| spelling | doaj.art-ba4f992a877141209d623481cb3d3b352023-11-21T13:35:30ZengMDPI AGPhotonics2304-67322021-03-01849810.3390/photonics8040098Avalanche Photodiodes with Dual Multiplication Layers for High-Speed and Wide Dynamic Range PerformancesNaseem0Zohauddin Ahmad1Yan-Min Liao2Rui-Lin Chao3Po-Shun Wang4Yi-Shan Lee5Sean Yang6Sheng-Yun Wang7Hsiang-Szu Chang8Hung-Shiang Chen9Jack Jia-Sheng Huang10Emin Chou11Yu-Heng Jan12Jin-Wei Shi13Department of Electrical Engineering, National Central University, Taoyuan 320, TaiwanDepartment of Electrical Engineering, National Central University, Taoyuan 320, TaiwanDepartment of Electrical Engineering, National Central University, Taoyuan 320, TaiwanDepartment of Electrical Engineering, National Central University, Taoyuan 320, TaiwanDepartment of Electrical Engineering, National Central University, Taoyuan 320, TaiwanDepartment of Electrical Engineering, National Central University, Taoyuan 320, TaiwanSource Photonics, No. 46, Park Avenue 2nd Rd., Science-Based Industrial Park, Hsinchu 308, TaiwanSource Photonics, No. 46, Park Avenue 2nd Rd., Science-Based Industrial Park, Hsinchu 308, TaiwanSource Photonics, No. 46, Park Avenue 2nd Rd., Science-Based Industrial Park, Hsinchu 308, TaiwanSource Photonics, No. 46, Park Avenue 2nd Rd., Science-Based Industrial Park, Hsinchu 308, TaiwanSource Photonics, No. 46, Park Avenue 2nd Rd., Science-Based Industrial Park, Hsinchu 308, TaiwanSource Photonics, No. 46, Park Avenue 2nd Rd., Science-Based Industrial Park, Hsinchu 308, TaiwanSource Photonics, No. 46, Park Avenue 2nd Rd., Science-Based Industrial Park, Hsinchu 308, TaiwanDepartment of Electrical Engineering, National Central University, Taoyuan 320, TaiwanIn this work, we demonstrate In<sub>0.52</sub>Al<sub>0.48</sub>As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type In<sub>0.53</sub>Ga<sub>0.47</sub>As absorber layer and thin In<sub>0.52</sub>Al<sub>0.48</sub>As dual multiplication (M-) layer (60 and 88 nm), exhibit a wide optical-to-electrical bandwidth (16 GHz) with high responsivity (2.5 A/W) under strong light illumination (around 1 mW). The measured bias dependent 3-dB O-E bandwidth was pinned at 16 GHz without any serious degradation near the saturation current output. To further increase the speed, we downscaled the active diameter and adopted a back-side illuminated structure with flip-chip bonding for batter optical alignment tolerance. A significant improvement in maximum bandwidth was demonstrated (25 versus 18 GHz). On the other hand, we adopted a thick dual M-layer (200 and 300 nm) and 2 μm absorber layer in the APD design to circumvent the problem of serious bandwidth degradation under high gain (>100) and high-power operation which significantly enhanced the dynamic range. Due to dual M-layer, the carriers could be energized in the first M-layer then propagate to the second M-layer to trigger the avalanche process. In both cases, despite variation in thickness of the absorber and M-layer, the cascade avalanche process leads to values close to the ultra-high gain bandwidth product (GBP) of around 460 GHz with a responsivity of 0.4 and 1 A/W at unit gain for the thin and thick M-layer devices, respectively. We successfully achieved a good sensitivity of around −20.6 dBm optical modulation amplitude (OMA) at a data rate of 25.78 Gb/s, by packaging the fabricated APDs (thin dual M-layer (60 and 88 nm) version) with a 25 Gb/s trans-impedance amplifier in a 100 Gb/s ROSA package. The results show that, the incorporation of a dual multiplication (M) layer structure in the APD opens a new window to obtaining the higher GBP in order to meet the requirements for high-speed transmission without the need of further downscaling the multiplication layer.https://www.mdpi.com/2304-6732/8/4/98avalanche photodiodephotodiodephotodetector |
| spellingShingle | Naseem Zohauddin Ahmad Yan-Min Liao Rui-Lin Chao Po-Shun Wang Yi-Shan Lee Sean Yang Sheng-Yun Wang Hsiang-Szu Chang Hung-Shiang Chen Jack Jia-Sheng Huang Emin Chou Yu-Heng Jan Jin-Wei Shi Avalanche Photodiodes with Dual Multiplication Layers for High-Speed and Wide Dynamic Range Performances Photonics avalanche photodiode photodiode photodetector |
| title | Avalanche Photodiodes with Dual Multiplication Layers for High-Speed and Wide Dynamic Range Performances |
| title_full | Avalanche Photodiodes with Dual Multiplication Layers for High-Speed and Wide Dynamic Range Performances |
| title_fullStr | Avalanche Photodiodes with Dual Multiplication Layers for High-Speed and Wide Dynamic Range Performances |
| title_full_unstemmed | Avalanche Photodiodes with Dual Multiplication Layers for High-Speed and Wide Dynamic Range Performances |
| title_short | Avalanche Photodiodes with Dual Multiplication Layers for High-Speed and Wide Dynamic Range Performances |
| title_sort | avalanche photodiodes with dual multiplication layers for high speed and wide dynamic range performances |
| topic | avalanche photodiode photodiode photodetector |
| url | https://www.mdpi.com/2304-6732/8/4/98 |
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