Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells

Abstract In the present work, indium tin oxide (ITO)/n‐CdS/p‐SnS/Au structured solar cells are fabricated with best conversion efficiency of 0.005%. A detailed investigation is made into the cause of the poor conversion efficiency and the cause is narrowed down to defects in p‐SnS which effect the j...

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Main Authors: Yashika Gupta, Chhaya Ravikant, Arun Palakkandy
Format: Article
Language:English
Published: Wiley 2018-07-01
Series:Global Challenges
Subjects:
Online Access:https://doi.org/10.1002/gch2.201800017
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author Yashika Gupta
Chhaya Ravikant
Arun Palakkandy
author_facet Yashika Gupta
Chhaya Ravikant
Arun Palakkandy
author_sort Yashika Gupta
collection DOAJ
description Abstract In the present work, indium tin oxide (ITO)/n‐CdS/p‐SnS/Au structured solar cells are fabricated with best conversion efficiency of 0.005%. A detailed investigation is made into the cause of the poor conversion efficiency and the cause is narrowed down to defects in p‐SnS which effect the junction and the neutral region of the cell. The junctions performance is quantified using the ideality factor which is found to be related to the band misalignment. The paper also investigates into literature and discusses efforts made to overcome the problems with this structure.
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spelling doaj.art-baca5fa763a74787990eb039e5abbca82023-08-14T09:40:29ZengWileyGlobal Challenges2056-66462018-07-0127n/an/a10.1002/gch2.201800017Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar CellsYashika Gupta0Chhaya Ravikant1Arun Palakkandy2Material Science Research Lab S.G.T.B. Khalsa College University of Delhi, New Delhi Delhi 110007 IndiaDepartment of Applied Sciences Indira Gandhi Delhi Technical University Kashmere Gate, New Delhi Delhi 110006 IndiaMaterial Science Research Lab S.G.T.B. Khalsa College University of Delhi, New Delhi Delhi 110007 IndiaAbstract In the present work, indium tin oxide (ITO)/n‐CdS/p‐SnS/Au structured solar cells are fabricated with best conversion efficiency of 0.005%. A detailed investigation is made into the cause of the poor conversion efficiency and the cause is narrowed down to defects in p‐SnS which effect the junction and the neutral region of the cell. The junctions performance is quantified using the ideality factor which is found to be related to the band misalignment. The paper also investigates into literature and discusses efforts made to overcome the problems with this structure.https://doi.org/10.1002/gch2.201800017conversion eficiencyn‐CdS/p‐SnS solar cellstrap‐assisted tunneling recombination
spellingShingle Yashika Gupta
Chhaya Ravikant
Arun Palakkandy
Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells
Global Challenges
conversion eficiency
n‐CdS/p‐SnS solar cells
trap‐assisted tunneling recombination
title Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells
title_full Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells
title_fullStr Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells
title_full_unstemmed Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells
title_short Mitigating Reasons for the Poor Performance of n‐CdS/p‐SnS Solar Cells
title_sort mitigating reasons for the poor performance of n cds p sns solar cells
topic conversion eficiency
n‐CdS/p‐SnS solar cells
trap‐assisted tunneling recombination
url https://doi.org/10.1002/gch2.201800017
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