Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping
Abstract To achieve a better material for uncooled infrared (IR) detector, polycrystalline VO2(B) thin films with layered W-doping were fabricated on Si substrates by magnetron sputtering, and the best temperature coefficient of resistance (TCR) value reached −4.1%/K. The film synthesis was in a two...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Tsinghua University Press
2017-09-01
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| Series: | Journal of Advanced Ceramics |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1007/s40145-017-0231-7 |
| _version_ | 1797722652081651712 |
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| author | Chuanshuo Zhang Dongli Hu Hui Gu Juanjuan Xing Ping Xiong Dongyun Wan Yanfeng Gao |
| author_facet | Chuanshuo Zhang Dongli Hu Hui Gu Juanjuan Xing Ping Xiong Dongyun Wan Yanfeng Gao |
| author_sort | Chuanshuo Zhang |
| collection | DOAJ |
| description | Abstract To achieve a better material for uncooled infrared (IR) detector, polycrystalline VO2(B) thin films with layered W-doping were fabricated on Si substrates by magnetron sputtering, and the best temperature coefficient of resistance (TCR) value reached −4.1%/K. The film synthesis was in a two-step route, first deposition at room temperature and then post-deposition annealing at 450 °C, to better control the crystallization behavior. Various transmission electron microscopy (TEM) methods were employed to investigate three sets of multi-layered films with different deposition time, 10, 20, and 30 min, with especial emphasis on the effect of layered W-doping scheme on the formation of multiple VO2(B) layers. Spatial-resolved energy dispersive X-ray spectroscopy (EDS) revealed the alternative patterns of W-rich layers and W-poor layers, while the thinner films exhibited better crystallinity and texturing. By comparison with an as-deposited film, it was found that the inter-diffusion between the two types of layers was completed in the deposition step while both remained in amorphous structure. A stable W solution of about 8 cat% in VO2(B) layers measured from all these films indicated that the layered doping can tailor the multi-layered microstructure to optimize the performance of VO2(B) films. |
| first_indexed | 2024-03-12T09:50:27Z |
| format | Article |
| id | doaj.art-bb0429157cb740bf8f21a49abaf940ad |
| institution | Directory Open Access Journal |
| issn | 2226-4108 2227-8508 |
| language | English |
| last_indexed | 2024-03-12T09:50:27Z |
| publishDate | 2017-09-01 |
| publisher | Tsinghua University Press |
| record_format | Article |
| series | Journal of Advanced Ceramics |
| spelling | doaj.art-bb0429157cb740bf8f21a49abaf940ad2023-09-02T12:35:40ZengTsinghua University PressJournal of Advanced Ceramics2226-41082227-85082017-09-016319620610.1007/s40145-017-0231-7Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-dopingChuanshuo Zhang0Dongli Hu1Hui Gu2Juanjuan Xing3Ping Xiong4Dongyun Wan5Yanfeng Gao6School of Materials Science and Engineering, Shanghai UniversitySchool of Materials Science and Engineering, Shanghai UniversitySchool of Materials Science and Engineering, Shanghai UniversitySchool of Materials Science and Engineering, Shanghai UniversitySchool of Materials Science and Engineering, Shanghai UniversitySchool of Materials Science and Engineering, Shanghai UniversitySchool of Materials Science and Engineering, Shanghai UniversityAbstract To achieve a better material for uncooled infrared (IR) detector, polycrystalline VO2(B) thin films with layered W-doping were fabricated on Si substrates by magnetron sputtering, and the best temperature coefficient of resistance (TCR) value reached −4.1%/K. The film synthesis was in a two-step route, first deposition at room temperature and then post-deposition annealing at 450 °C, to better control the crystallization behavior. Various transmission electron microscopy (TEM) methods were employed to investigate three sets of multi-layered films with different deposition time, 10, 20, and 30 min, with especial emphasis on the effect of layered W-doping scheme on the formation of multiple VO2(B) layers. Spatial-resolved energy dispersive X-ray spectroscopy (EDS) revealed the alternative patterns of W-rich layers and W-poor layers, while the thinner films exhibited better crystallinity and texturing. By comparison with an as-deposited film, it was found that the inter-diffusion between the two types of layers was completed in the deposition step while both remained in amorphous structure. A stable W solution of about 8 cat% in VO2(B) layers measured from all these films indicated that the layered doping can tailor the multi-layered microstructure to optimize the performance of VO2(B) films.http://link.springer.com/article/10.1007/s40145-017-0231-7VO2(B) thin filmlayered W-dopingcrystallizationtransmission electron microscopy (TEM)solid-solution |
| spellingShingle | Chuanshuo Zhang Dongli Hu Hui Gu Juanjuan Xing Ping Xiong Dongyun Wan Yanfeng Gao Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping Journal of Advanced Ceramics VO2(B) thin film layered W-doping crystallization transmission electron microscopy (TEM) solid-solution |
| title | Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping |
| title_full | Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping |
| title_fullStr | Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping |
| title_full_unstemmed | Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping |
| title_short | Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping |
| title_sort | crystallization and inter diffusional behaviors in the formation of vo2 b thin film with layered w doping |
| topic | VO2(B) thin film layered W-doping crystallization transmission electron microscopy (TEM) solid-solution |
| url | http://link.springer.com/article/10.1007/s40145-017-0231-7 |
| work_keys_str_mv | AT chuanshuozhang crystallizationandinterdiffusionalbehaviorsintheformationofvo2bthinfilmwithlayeredwdoping AT donglihu crystallizationandinterdiffusionalbehaviorsintheformationofvo2bthinfilmwithlayeredwdoping AT huigu crystallizationandinterdiffusionalbehaviorsintheformationofvo2bthinfilmwithlayeredwdoping AT juanjuanxing crystallizationandinterdiffusionalbehaviorsintheformationofvo2bthinfilmwithlayeredwdoping AT pingxiong crystallizationandinterdiffusionalbehaviorsintheformationofvo2bthinfilmwithlayeredwdoping AT dongyunwan crystallizationandinterdiffusionalbehaviorsintheformationofvo2bthinfilmwithlayeredwdoping AT yanfenggao crystallizationandinterdiffusionalbehaviorsintheformationofvo2bthinfilmwithlayeredwdoping |