Holes Outperform Electrons in Group IV Semiconductor Materials
A record‐high mobility of holes, reaching 4.3 × 106 cm2 V−1 s−1 at 300 mK in an epitaxial strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported. This major breakthrough is achieved due to the development of state‐of‐the‐art epitaxial growth technology culminating in...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-04-01
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| Series: | Small Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/smsc.202200094 |
| _version_ | 1797846508633063424 |
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| author | Maksym Myronov Jan Kycia Philip Waldron Weihong Jiang Pedro Barrios Alex Bogan Peter Coleridge Sergei Studenikin |
| author_facet | Maksym Myronov Jan Kycia Philip Waldron Weihong Jiang Pedro Barrios Alex Bogan Peter Coleridge Sergei Studenikin |
| author_sort | Maksym Myronov |
| collection | DOAJ |
| description | A record‐high mobility of holes, reaching 4.3 × 106 cm2 V−1 s−1 at 300 mK in an epitaxial strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported. This major breakthrough is achieved due to the development of state‐of‐the‐art epitaxial growth technology culminating in superior monocrystalline quality of the s‐Ge material platform with a very low density of background impurities and other imperfections. As a consequence, the hole mobility in s‐Ge appears to be ≈2 times higher than the highest electron mobility in strained silicon. In addition to the record mobility, this material platform reveals a unique combination of properties, which are a very large and tuneable effective g*‐factor (>18), a very low percolation density (5 × 109 cm−2) and a small effective mass (0.054 m 0). This long‐sought combination of parameters in one material system is important for the research and development of low‐temperature electronics with reduced Joule heating and for quantum‐electronics circuits based on spin qubits. |
| first_indexed | 2024-04-09T17:56:08Z |
| format | Article |
| id | doaj.art-bb7af52d3a8d4019a832450a93b1de39 |
| institution | Directory Open Access Journal |
| issn | 2688-4046 |
| language | English |
| last_indexed | 2024-04-09T17:56:08Z |
| publishDate | 2023-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Science |
| spelling | doaj.art-bb7af52d3a8d4019a832450a93b1de392023-04-15T03:26:33ZengWiley-VCHSmall Science2688-40462023-04-0134n/an/a10.1002/smsc.202200094Holes Outperform Electrons in Group IV Semiconductor MaterialsMaksym Myronov0Jan Kycia1Philip Waldron2Weihong Jiang3Pedro Barrios4Alex Bogan5Peter Coleridge6Sergei Studenikin7Physics Department The University of Warwick Coventry CV4 7AL UKPhysics and Astronomy Department University of Waterloo Waterloo N2L 3G1 CanadaSecurity and Disruptive Technologies Research Centre National Research Council of Canada Ottawa K1A 0R6 Ontario CanadaSecurity and Disruptive Technologies Research Centre National Research Council of Canada Ottawa K1A 0R6 Ontario CanadaSecurity and Disruptive Technologies Research Centre National Research Council of Canada Ottawa K1A 0R6 Ontario CanadaSecurity and Disruptive Technologies Research Centre National Research Council of Canada Ottawa K1A 0R6 Ontario CanadaSecurity and Disruptive Technologies Research Centre National Research Council of Canada Ottawa K1A 0R6 Ontario CanadaSecurity and Disruptive Technologies Research Centre National Research Council of Canada Ottawa K1A 0R6 Ontario CanadaA record‐high mobility of holes, reaching 4.3 × 106 cm2 V−1 s−1 at 300 mK in an epitaxial strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported. This major breakthrough is achieved due to the development of state‐of‐the‐art epitaxial growth technology culminating in superior monocrystalline quality of the s‐Ge material platform with a very low density of background impurities and other imperfections. As a consequence, the hole mobility in s‐Ge appears to be ≈2 times higher than the highest electron mobility in strained silicon. In addition to the record mobility, this material platform reveals a unique combination of properties, which are a very large and tuneable effective g*‐factor (>18), a very low percolation density (5 × 109 cm−2) and a small effective mass (0.054 m 0). This long‐sought combination of parameters in one material system is important for the research and development of low‐temperature electronics with reduced Joule heating and for quantum‐electronics circuits based on spin qubits.https://doi.org/10.1002/smsc.2022000942D hole gasesgermaniummobilityquantum materialssemiconductorsspin orbit interaction |
| spellingShingle | Maksym Myronov Jan Kycia Philip Waldron Weihong Jiang Pedro Barrios Alex Bogan Peter Coleridge Sergei Studenikin Holes Outperform Electrons in Group IV Semiconductor Materials Small Science 2D hole gases germanium mobility quantum materials semiconductors spin orbit interaction |
| title | Holes Outperform Electrons in Group IV Semiconductor Materials |
| title_full | Holes Outperform Electrons in Group IV Semiconductor Materials |
| title_fullStr | Holes Outperform Electrons in Group IV Semiconductor Materials |
| title_full_unstemmed | Holes Outperform Electrons in Group IV Semiconductor Materials |
| title_short | Holes Outperform Electrons in Group IV Semiconductor Materials |
| title_sort | holes outperform electrons in group iv semiconductor materials |
| topic | 2D hole gases germanium mobility quantum materials semiconductors spin orbit interaction |
| url | https://doi.org/10.1002/smsc.202200094 |
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