Holes Outperform Electrons in Group IV Semiconductor Materials

Holes Outperform Electrons in Group IV Semiconductor Materials

A record‐high mobility of holes, reaching 4.3 × 106 cm2 V−1 s−1 at 300 mK in an epitaxial strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported. This major breakthrough is achieved due to the development of state‐of‐the‐art epitaxial growth technology culminating in...

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Bibliographic Details
Main Authors: Maksym Myronov, Jan Kycia, Philip Waldron, Weihong Jiang, Pedro Barrios, Alex Bogan, Peter Coleridge, Sergei Studenikin
Format: Article
Language:English
Published: Wiley-VCH 2023-04-01
Series:Small Science
Subjects:
2D hole gases
germanium
mobility
quantum materials
semiconductors
spin orbit interaction
Online Access:https://doi.org/10.1002/smsc.202200094

Internet

https://doi.org/10.1002/smsc.202200094

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