Holes Outperform Electrons in Group IV Semiconductor Materials
A record‐high mobility of holes, reaching 4.3 × 106 cm2 V−1 s−1 at 300 mK in an epitaxial strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported. This major breakthrough is achieved due to the development of state‐of‐the‐art epitaxial growth technology culminating in...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-04-01
|
| Series: | Small Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/smsc.202200094 |