Bi doped LaOCl and LaOF thin films grown by pulsed laser deposition
Thin films of Bi3+ doped LaOCl and LaOF phosphors prepared via the pulsed laser deposition (PLD) technique in vacuum and different argon (Ar) pressures were compared in order to assess their luminescence properties. All peaks of the X-ray diffraction patterns of the films were consistent with the te...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-03-01
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| Series: | Heliyon |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S240584402403278X |
| _version_ | 1797259736423333888 |
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| author | Babiker M. Jaffar H.C. Swart H.A.A. Seed Ahmed A. Yousif R.E. Kroon |
| author_facet | Babiker M. Jaffar H.C. Swart H.A.A. Seed Ahmed A. Yousif R.E. Kroon |
| author_sort | Babiker M. Jaffar |
| collection | DOAJ |
| description | Thin films of Bi3+ doped LaOCl and LaOF phosphors prepared via the pulsed laser deposition (PLD) technique in vacuum and different argon (Ar) pressures were compared in order to assess their luminescence properties. All peaks of the X-ray diffraction patterns of the films were consistent with the tetragonal structure of the LaOCl and LaOF, but in the case of LaOF the signal was weaker and not all peaks were present, suggesting some preferred orientation. Photoluminescence measurements revealed that the films exhibited emission around 344 nm for LaOCl:Bi and 518 nm for LaOF:Bi under excitations of 266 nm and 263 nm, respectively. The luminescence from the LaOF:Bi sample was less intense compared to the LaOCl:Bi sample prepared under the same conditions, which was also the case for the powder samples. The amount of ablated material present on the substrate was much less for LaOF:Bi compared to LaOCl:Bi, which is attributed to the greater bandgap and hence weaker absorption of the laser pulses for LaOF:Bi. Therefore phosphors based on LaOCl as the host material were found to be preferable over LaOF under the PLD conditions used in this study. |
| first_indexed | 2024-03-07T16:53:21Z |
| format | Article |
| id | doaj.art-bb80b02c167346e2895bb310694dbb2f |
| institution | Directory Open Access Journal |
| issn | 2405-8440 |
| language | English |
| last_indexed | 2024-04-24T23:14:10Z |
| publishDate | 2024-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Heliyon |
| spelling | doaj.art-bb80b02c167346e2895bb310694dbb2f2024-03-17T07:57:45ZengElsevierHeliyon2405-84402024-03-01105e27247Bi doped LaOCl and LaOF thin films grown by pulsed laser depositionBabiker M. Jaffar0H.C. Swart1H.A.A. Seed Ahmed2A. Yousif3R.E. Kroon4Department of Physics, Box 339, University of the Free State, Bloemfontein, 9300, South Africa; Department of Physics, Box 321, University of Khartoum, Omdurman, 11115, SudanDepartment of Physics, Box 339, University of the Free State, Bloemfontein, 9300, South AfricaDepartment of Physics, Box 321, University of Khartoum, Omdurman, 11115, SudanDepartment of Physics, Box 321, University of Khartoum, Omdurman, 11115, SudanDepartment of Physics, Box 339, University of the Free State, Bloemfontein, 9300, South Africa; Corresponding author.Thin films of Bi3+ doped LaOCl and LaOF phosphors prepared via the pulsed laser deposition (PLD) technique in vacuum and different argon (Ar) pressures were compared in order to assess their luminescence properties. All peaks of the X-ray diffraction patterns of the films were consistent with the tetragonal structure of the LaOCl and LaOF, but in the case of LaOF the signal was weaker and not all peaks were present, suggesting some preferred orientation. Photoluminescence measurements revealed that the films exhibited emission around 344 nm for LaOCl:Bi and 518 nm for LaOF:Bi under excitations of 266 nm and 263 nm, respectively. The luminescence from the LaOF:Bi sample was less intense compared to the LaOCl:Bi sample prepared under the same conditions, which was also the case for the powder samples. The amount of ablated material present on the substrate was much less for LaOF:Bi compared to LaOCl:Bi, which is attributed to the greater bandgap and hence weaker absorption of the laser pulses for LaOF:Bi. Therefore phosphors based on LaOCl as the host material were found to be preferable over LaOF under the PLD conditions used in this study.http://www.sciencedirect.com/science/article/pii/S240584402403278XLaOClLaOFBismuth ionsThin filmsPulsed laser depositionPhotoluminescence |
| spellingShingle | Babiker M. Jaffar H.C. Swart H.A.A. Seed Ahmed A. Yousif R.E. Kroon Bi doped LaOCl and LaOF thin films grown by pulsed laser deposition Heliyon LaOCl LaOF Bismuth ions Thin films Pulsed laser deposition Photoluminescence |
| title | Bi doped LaOCl and LaOF thin films grown by pulsed laser deposition |
| title_full | Bi doped LaOCl and LaOF thin films grown by pulsed laser deposition |
| title_fullStr | Bi doped LaOCl and LaOF thin films grown by pulsed laser deposition |
| title_full_unstemmed | Bi doped LaOCl and LaOF thin films grown by pulsed laser deposition |
| title_short | Bi doped LaOCl and LaOF thin films grown by pulsed laser deposition |
| title_sort | bi doped laocl and laof thin films grown by pulsed laser deposition |
| topic | LaOCl LaOF Bismuth ions Thin films Pulsed laser deposition Photoluminescence |
| url | http://www.sciencedirect.com/science/article/pii/S240584402403278X |
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