Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas Sensor

Nitric oxide (NO) is a toxic gas, which is dangerous for human health and causes many respiratory infections, poisoning, and lung damage. In this work, we have successfully grown ZnO nanorod film on annealed ZnO seed layer in different ambient temperatures, and the morphology of the nanorods sensing...

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Main Authors: Pragya Singh, Firman Mangasa Simanjuntak, Li-Lun Hu, Tseung-Yuen Tseng, Hsiao-Wen Zan, Jinn P. Chu
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/22/1/390
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author Pragya Singh
Firman Mangasa Simanjuntak
Li-Lun Hu
Tseung-Yuen Tseng
Hsiao-Wen Zan
Jinn P. Chu
author_facet Pragya Singh
Firman Mangasa Simanjuntak
Li-Lun Hu
Tseung-Yuen Tseng
Hsiao-Wen Zan
Jinn P. Chu
author_sort Pragya Singh
collection DOAJ
description Nitric oxide (NO) is a toxic gas, which is dangerous for human health and causes many respiratory infections, poisoning, and lung damage. In this work, we have successfully grown ZnO nanorod film on annealed ZnO seed layer in different ambient temperatures, and the morphology of the nanorods sensing layer that affects the gas sensing response to nitric oxide (NO) gas were investigated. To acknowledge the effect of annealing treatment, the devices were fabricated with annealed seed layers in air and argon ambient at 300 °C and 500 °C for 1 h. To simulate a vertical device structure, a silver nanowire electrode covered in ZnO nanorod film was placed onto the hydrothermal grown ZnO nanorod film. We found that annealing treatment changes the seed layer’s grain size and defect concentration and is responsible for this phenomenon. The I–V and gas sensing characteristics were dependent on the oxygen defects concentration and porosity of nanorods to react with the target gas. The resulting as-deposited ZnO seed layer shows better sensing response than that annealed in an air and argon environment due to the nanorod morphology and variation in oxygen defect concentration. At room temperature, the devices show good sensing response to NO concentration of 10 ppb and up to 100 ppb. Shortly, these results can be beneficial in the NO breath detection for patients with chronic inflammatory airway disease, such as asthma.
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spelling doaj.art-bbac72e922ec4399a5b8c5fa4416f9312023-11-23T12:21:30ZengMDPI AGSensors1424-82202022-01-0122139010.3390/s22010390Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas SensorPragya Singh0Firman Mangasa Simanjuntak1Li-Lun Hu2Tseung-Yuen Tseng3Hsiao-Wen Zan4Jinn P. Chu5Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, TaiwanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, TaiwanNitric oxide (NO) is a toxic gas, which is dangerous for human health and causes many respiratory infections, poisoning, and lung damage. In this work, we have successfully grown ZnO nanorod film on annealed ZnO seed layer in different ambient temperatures, and the morphology of the nanorods sensing layer that affects the gas sensing response to nitric oxide (NO) gas were investigated. To acknowledge the effect of annealing treatment, the devices were fabricated with annealed seed layers in air and argon ambient at 300 °C and 500 °C for 1 h. To simulate a vertical device structure, a silver nanowire electrode covered in ZnO nanorod film was placed onto the hydrothermal grown ZnO nanorod film. We found that annealing treatment changes the seed layer’s grain size and defect concentration and is responsible for this phenomenon. The I–V and gas sensing characteristics were dependent on the oxygen defects concentration and porosity of nanorods to react with the target gas. The resulting as-deposited ZnO seed layer shows better sensing response than that annealed in an air and argon environment due to the nanorod morphology and variation in oxygen defect concentration. At room temperature, the devices show good sensing response to NO concentration of 10 ppb and up to 100 ppb. Shortly, these results can be beneficial in the NO breath detection for patients with chronic inflammatory airway disease, such as asthma.https://www.mdpi.com/1424-8220/22/1/390annealingZnOnanorodsthin-filmgas sensormetal-oxide-semiconductor
spellingShingle Pragya Singh
Firman Mangasa Simanjuntak
Li-Lun Hu
Tseung-Yuen Tseng
Hsiao-Wen Zan
Jinn P. Chu
Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas Sensor
Sensors
annealing
ZnO
nanorods
thin-film
gas sensor
metal-oxide-semiconductor
title Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas Sensor
title_full Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas Sensor
title_fullStr Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas Sensor
title_full_unstemmed Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas Sensor
title_short Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas Sensor
title_sort negative effects of annealed seed layer on the performance of zno nanorods based nitric oxide gas sensor
topic annealing
ZnO
nanorods
thin-film
gas sensor
metal-oxide-semiconductor
url https://www.mdpi.com/1424-8220/22/1/390
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AT lilunhu negativeeffectsofannealedseedlayerontheperformanceofznonanorodsbasednitricoxidegassensor
AT tseungyuentseng negativeeffectsofannealedseedlayerontheperformanceofznonanorodsbasednitricoxidegassensor
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