Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon
Chemical–mechanical polishing (CMP) is widely adopted as a key bridge between fine rotation grinding and ion beam figuring in super-smooth monocrystalline silicon mirror manufacturing. However, controlling mid- to short-spatial-period errors during CMP is a challenge owing to the complex chemical–me...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-08-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/15/16/5641 |