An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor

An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor

In this paper, a single-event transient model based on the effective space charge for MOSFETs is proposed. The physical process of deposited and moving charges is analyzed in detail. The influence of deposited charges on the electric field in the depletion region is investigated. The electric field...

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Bibliographic Details
Main Authors: Yutao Zhang, Hongliang Lu, Chen Liu, Yuming Zhang, Ruxue Yao, Xingming Liu
Format: Article
Language:English
Published: MDPI AG 2023-11-01
Series:Micromachines
Subjects:
CMOS inverter
current plateau effect
modeling method
single-event transient
soft error rate
Online Access:https://www.mdpi.com/2072-666X/14/11/2085

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