The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters

The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters

Silicon carbide is an emerging material in the field of wide band gap semiconductor devices. Due to its high critical breakdown field and high thermal conductance, silicon carbide MOSFET devices are predestined for high-power applications. The concentration of defects with short capture and emission...

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Detalles Bibliográficos
Main Authors: Maximilian W. Feil, Andreas Huerner, Katja Puschkarsky, Christian Schleich, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger, Tibor Grasser
Formato: Artigo
Idioma:English
Publicado: MDPI AG 2020-12-01
Series:Crystals
Subjects:
hysteresis
device parameters
reproducibility
device characteristics
silicon carbide
threshold voltage
Acceso en liña:https://www.mdpi.com/2073-4352/10/12/1143

Internet

https://www.mdpi.com/2073-4352/10/12/1143

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