The Modeling of growth process on the surface of crystal
The article is devoted to modelling the growth of thin films on the surfaces of crystals having a similar crystal structure with a small parameter of mismatch of the lattice of substances from which the film and the crystal substrate are formed. A review of modelling methods based on both analytical...
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2022-06-01
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| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | https://journals.pnu.edu.ua/index.php/pcss/article/view/5691 |
| _version_ | 1797976607684558848 |
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| author | R.L. Politanskyi V.I. Gorbulik I.T. Kogut M.V. Vistak |
| author_facet | R.L. Politanskyi V.I. Gorbulik I.T. Kogut M.V. Vistak |
| author_sort | R.L. Politanskyi |
| collection | DOAJ |
| description | The article is devoted to modelling the growth of thin films on the surfaces of crystals having a similar crystal structure with a small parameter of mismatch of the lattice of substances from which the film and the crystal substrate are formed. A review of modelling methods based on both analytical expressions and computational methods is made. A number of methods for modelling the most typical processes: surface formation in the form of pyramidal formations (so-called needle crystals), two-dimensional with initial islands of growth and three-dimensional uneven growth processes. To model the process of growth of needle crystals, it is proposed to use a method based on Gaussian statistics of surface height increments. The model of three-dimensional growth of the crystal surface, which uses the iterative algorithm of Foss, and which makes it possible to investigate the processes of stepped, uneven growth of crystals, is also considered. In contrast to stepwise growth, a model of submonolayer growth of a film based on the Monte Carlo method is considered. For submonolayer growth of the film, pseudo-random sequences are used, which simulate the initial arrangement of the nuclei of the nucleus of the next layer on the crystal surface. The computational characteristics of this method are determined, namely the dependence of the number of iterations on the initial surface filling coefficient. |
| first_indexed | 2024-04-11T04:53:37Z |
| format | Article |
| id | doaj.art-bbda8fb67e61444eafd92ed3d44b0500 |
| institution | Directory Open Access Journal |
| issn | 1729-4428 2309-8589 |
| language | English |
| last_indexed | 2024-04-11T04:53:37Z |
| publishDate | 2022-06-01 |
| publisher | Vasyl Stefanyk Precarpathian National University |
| record_format | Article |
| series | Фізика і хімія твердого тіла |
| spelling | doaj.art-bbda8fb67e61444eafd92ed3d44b05002022-12-26T23:51:50ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892022-06-0123238739310.15330/pcss.23.2.387-3935691The Modeling of growth process on the surface of crystalR.L. Politanskyi0V.I. Gorbulik1I.T. Kogut2M.V. Vistak3Yuri Fedjkovych Chernivtsy National University, Chernivtsy, UkraineYuri Fedjkovych Chernivtsy National University, Chernivtsy, UkraineVasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, UkraineDanylo Halytsky Lviv National Medical University, Lviv, UkraineThe article is devoted to modelling the growth of thin films on the surfaces of crystals having a similar crystal structure with a small parameter of mismatch of the lattice of substances from which the film and the crystal substrate are formed. A review of modelling methods based on both analytical expressions and computational methods is made. A number of methods for modelling the most typical processes: surface formation in the form of pyramidal formations (so-called needle crystals), two-dimensional with initial islands of growth and three-dimensional uneven growth processes. To model the process of growth of needle crystals, it is proposed to use a method based on Gaussian statistics of surface height increments. The model of three-dimensional growth of the crystal surface, which uses the iterative algorithm of Foss, and which makes it possible to investigate the processes of stepped, uneven growth of crystals, is also considered. In contrast to stepwise growth, a model of submonolayer growth of a film based on the Monte Carlo method is considered. For submonolayer growth of the film, pseudo-random sequences are used, which simulate the initial arrangement of the nuclei of the nucleus of the next layer on the crystal surface. The computational characteristics of this method are determined, namely the dependence of the number of iterations on the initial surface filling coefficient.https://journals.pnu.edu.ua/index.php/pcss/article/view/5691monte carlo methodcrystal growthanalytical methods |
| spellingShingle | R.L. Politanskyi V.I. Gorbulik I.T. Kogut M.V. Vistak The Modeling of growth process on the surface of crystal Фізика і хімія твердого тіла monte carlo method crystal growth analytical methods |
| title | The Modeling of growth process on the surface of crystal |
| title_full | The Modeling of growth process on the surface of crystal |
| title_fullStr | The Modeling of growth process on the surface of crystal |
| title_full_unstemmed | The Modeling of growth process on the surface of crystal |
| title_short | The Modeling of growth process on the surface of crystal |
| title_sort | modeling of growth process on the surface of crystal |
| topic | monte carlo method crystal growth analytical methods |
| url | https://journals.pnu.edu.ua/index.php/pcss/article/view/5691 |
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