Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications
This work reports an alternative atomic layer deposition (ALD) method to fabricate ZnO thin-film transistors (TFTs). The ZnO film is deposited with temperature naturally-cooling process from 200 to 100°C, called a “temperature gradient ZnO (TG-ZnO)”). After optimized...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/9162063/ |
| _version_ | 1818651685103337472 |
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| author | Bowen Che Hao Zhang Jun Yang Jie Qi Xingwei Ding Jianhua Zhang |
| author_facet | Bowen Che Hao Zhang Jun Yang Jie Qi Xingwei Ding Jianhua Zhang |
| author_sort | Bowen Che |
| collection | DOAJ |
| description | This work reports an alternative atomic layer deposition (ALD) method to fabricate ZnO thin-film transistors (TFTs). The ZnO film is deposited with temperature naturally-cooling process from 200 to 100°C, called a “temperature gradient ZnO (TG-ZnO)”). After optimized annealing treatment at 300°C, the TG-ZnO TFT shows an excellent performance compared to those fabricated with traditional constant temperature deposition, including a high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\left(\mu_{\text {sat }}\right)$ </tex-math></inline-formula> of 11.8 cm<sup>2</sup>/Vs, which is 5 times higher than the ZnO TFT, a good on/off-state current ratio <inline-formula> <tex-math notation="LaTeX">$\left(I_{\mathrm{on}} / I_{\mathrm{off}}\right)$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$1.9 \times 10^{7}$ </tex-math></inline-formula>, a small subthreshold swing (<inline-formula> <tex-math notation="LaTeX">$SS$ </tex-math></inline-formula>) of 175 mV/decade and a threshold voltage <inline-formula> <tex-math notation="LaTeX">$\left(V_{\mathrm{th}}\right)$ </tex-math></inline-formula> of 1.1 V. Meanwhile, the TG-ZnO TFT has better crystallization than 100°C-ZnO and lower oxygen vacancies than 200°C-ZnO. These characters enable the TG-ZnO TFT not only to maintain a high mobility, but also to present a satisfactory <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{on}} / I_{\mathrm{off}}$ </tex-math></inline-formula> ratio. This promising deposition technique provides a new idea for fabricating TFTs with high mobility. |
| first_indexed | 2024-12-17T02:10:02Z |
| format | Article |
| id | doaj.art-bc1bc0b4c6fd4ffaa6028db1de49fac2 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-17T02:10:02Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-bc1bc0b4c6fd4ffaa6028db1de49fac22022-12-21T22:07:35ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01888588910.1109/JEDS.2020.30150309162063Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor ApplicationsBowen Che0https://orcid.org/0000-0002-2024-1878Hao Zhang1Jun Yang2Jie Qi3Xingwei Ding4https://orcid.org/0000-0002-9002-5185Jianhua Zhang5Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, ChinaCollege of Electronics and Information Science, Organic Optoelectronics Engineering Research Center of Fujian’s Universities, Fujian Jiangxia University, Fujian, ChinaKey Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, ChinaResearch and Development Department, Air Liquide Innovation Campus Shanghai, Shanghai, ChinaKey Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, ChinaKey Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, ChinaThis work reports an alternative atomic layer deposition (ALD) method to fabricate ZnO thin-film transistors (TFTs). The ZnO film is deposited with temperature naturally-cooling process from 200 to 100°C, called a “temperature gradient ZnO (TG-ZnO)”). After optimized annealing treatment at 300°C, the TG-ZnO TFT shows an excellent performance compared to those fabricated with traditional constant temperature deposition, including a high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\left(\mu_{\text {sat }}\right)$ </tex-math></inline-formula> of 11.8 cm<sup>2</sup>/Vs, which is 5 times higher than the ZnO TFT, a good on/off-state current ratio <inline-formula> <tex-math notation="LaTeX">$\left(I_{\mathrm{on}} / I_{\mathrm{off}}\right)$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$1.9 \times 10^{7}$ </tex-math></inline-formula>, a small subthreshold swing (<inline-formula> <tex-math notation="LaTeX">$SS$ </tex-math></inline-formula>) of 175 mV/decade and a threshold voltage <inline-formula> <tex-math notation="LaTeX">$\left(V_{\mathrm{th}}\right)$ </tex-math></inline-formula> of 1.1 V. Meanwhile, the TG-ZnO TFT has better crystallization than 100°C-ZnO and lower oxygen vacancies than 200°C-ZnO. These characters enable the TG-ZnO TFT not only to maintain a high mobility, but also to present a satisfactory <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{on}} / I_{\mathrm{off}}$ </tex-math></inline-formula> ratio. This promising deposition technique provides a new idea for fabricating TFTs with high mobility.https://ieeexplore.ieee.org/document/9162063/Thin-film transistorstemperature gradient ZnOatomic layer depositionoxygen vacancy |
| spellingShingle | Bowen Che Hao Zhang Jun Yang Jie Qi Xingwei Ding Jianhua Zhang Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications IEEE Journal of the Electron Devices Society Thin-film transistors temperature gradient ZnO atomic layer deposition oxygen vacancy |
| title | Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications |
| title_full | Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications |
| title_fullStr | Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications |
| title_full_unstemmed | Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications |
| title_short | Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications |
| title_sort | temperature gradient zno deposited via ald for high performance transistor applications |
| topic | Thin-film transistors temperature gradient ZnO atomic layer deposition oxygen vacancy |
| url | https://ieeexplore.ieee.org/document/9162063/ |
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