Fluorine, chlorine, and gallium co-doped zinc oxide transparent conductive films fabricated using the sol-gel spin method
Transparent conductive films (TCFs) are crucial components of solar cells. In this study, F, Cl, and Ga co-doped ZnO (FCGZO) TCFs were deposited onto a glass substrate using the sol-gel spin-coating method and rapid thermal annealing. The effects of F-doping content on the structural, morphological,...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-07-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847823000321 |
| _version_ | 1827904508412297216 |
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| author | Liwei Che Jianmin Song Jinzheng Yang Xiaoyang Chen Junjie Li Nan Zhang Shaopeng Yang Yanfeng Wang |
| author_facet | Liwei Che Jianmin Song Jinzheng Yang Xiaoyang Chen Junjie Li Nan Zhang Shaopeng Yang Yanfeng Wang |
| author_sort | Liwei Che |
| collection | DOAJ |
| description | Transparent conductive films (TCFs) are crucial components of solar cells. In this study, F, Cl, and Ga co-doped ZnO (FCGZO) TCFs were deposited onto a glass substrate using the sol-gel spin-coating method and rapid thermal annealing. The effects of F-doping content on the structural, morphological, electrical, and optical properties of FCGZO films were examined by XRD, TEM, FE-SEM, PL spectroscopy, XPS, Hall effects testing, and UV–vis–NIR spectroscopy. All prepared ZnO films exhibited a hexagonal wurtzite structure and preferentially grew along the c axis perpendicular to the substrate. Changes in the doping concentration of F changed the interplanar crystal spacing and O vacancies in the film. At a doping ratio of 2% (in mole), the F, Cl, and Ga co-doped ZnO film exhibited the best photoelectric performance, with a carrier concentration of 2.62 × 1020 cm−3, mobility of 14.56 cm2/(V·s), and resistivity of 1.64 × 10−3 Ω·cm. The average transmittance (AT) in the 380–1 600 nm region nearly 90% with air as the reference, and the optical band gap was 3.52 eV. |
| first_indexed | 2024-03-13T00:28:21Z |
| format | Article |
| id | doaj.art-bc39e4ee6caf4540858bd052f267e04d |
| institution | Directory Open Access Journal |
| issn | 2352-8478 |
| language | English |
| last_indexed | 2024-03-13T00:28:21Z |
| publishDate | 2023-07-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj.art-bc39e4ee6caf4540858bd052f267e04d2023-07-11T04:06:28ZengElsevierJournal of Materiomics2352-84782023-07-0194745753Fluorine, chlorine, and gallium co-doped zinc oxide transparent conductive films fabricated using the sol-gel spin methodLiwei Che0Jianmin Song1Jinzheng Yang2Xiaoyang Chen3Junjie Li4Nan Zhang5Shaopeng Yang6Yanfeng Wang7College of Sciences, Hebei North University, Photovoltaic Conductive Film Engineering Research Center of Hebei Province, Zhangjiakou, 075000, China; Province-Ministry Co-Construction Collaborative Innovation Center of Photovoltaic Technology of Hebei Province, Hebei University, Baoding, 071002, ChinaCollege of Sciences, Hebei Agriculture University, Baoding, 071001, China; Corresponding author.College of Sciences, Hebei North University, Photovoltaic Conductive Film Engineering Research Center of Hebei Province, Zhangjiakou, 075000, China; Province-Ministry Co-Construction Collaborative Innovation Center of Photovoltaic Technology of Hebei Province, Hebei University, Baoding, 071002, ChinaCollege of Sciences, Hebei North University, Photovoltaic Conductive Film Engineering Research Center of Hebei Province, Zhangjiakou, 075000, China; Province-Ministry Co-Construction Collaborative Innovation Center of Photovoltaic Technology of Hebei Province, Hebei University, Baoding, 071002, ChinaCollege of Sciences, Hebei North University, Photovoltaic Conductive Film Engineering Research Center of Hebei Province, Zhangjiakou, 075000, China; Province-Ministry Co-Construction Collaborative Innovation Center of Photovoltaic Technology of Hebei Province, Hebei University, Baoding, 071002, ChinaDepartment of Intelligence Reconnaissance, Special Police Academy of the Chinese People's Armed Police Force, Beijing, 102211, China; Corresponding author.Province-Ministry Co-Construction Collaborative Innovation Center of Photovoltaic Technology of Hebei Province, Hebei University, Baoding, 071002, China; Corresponding author.College of Sciences, Hebei North University, Photovoltaic Conductive Film Engineering Research Center of Hebei Province, Zhangjiakou, 075000, China; Province-Ministry Co-Construction Collaborative Innovation Center of Photovoltaic Technology of Hebei Province, Hebei University, Baoding, 071002, China; Corresponding author. College of Sciences, Hebei North University, Photovoltaic Conductive Film Engineering Research Center of Hebei Province, Zhangjiakou, 075000, China.Transparent conductive films (TCFs) are crucial components of solar cells. In this study, F, Cl, and Ga co-doped ZnO (FCGZO) TCFs were deposited onto a glass substrate using the sol-gel spin-coating method and rapid thermal annealing. The effects of F-doping content on the structural, morphological, electrical, and optical properties of FCGZO films were examined by XRD, TEM, FE-SEM, PL spectroscopy, XPS, Hall effects testing, and UV–vis–NIR spectroscopy. All prepared ZnO films exhibited a hexagonal wurtzite structure and preferentially grew along the c axis perpendicular to the substrate. Changes in the doping concentration of F changed the interplanar crystal spacing and O vacancies in the film. At a doping ratio of 2% (in mole), the F, Cl, and Ga co-doped ZnO film exhibited the best photoelectric performance, with a carrier concentration of 2.62 × 1020 cm−3, mobility of 14.56 cm2/(V·s), and resistivity of 1.64 × 10−3 Ω·cm. The average transmittance (AT) in the 380–1 600 nm region nearly 90% with air as the reference, and the optical band gap was 3.52 eV.http://www.sciencedirect.com/science/article/pii/S2352847823000321ZnO transparent Conductive filmsSol-gel spin coatingElectrical propertyOptical property |
| spellingShingle | Liwei Che Jianmin Song Jinzheng Yang Xiaoyang Chen Junjie Li Nan Zhang Shaopeng Yang Yanfeng Wang Fluorine, chlorine, and gallium co-doped zinc oxide transparent conductive films fabricated using the sol-gel spin method Journal of Materiomics ZnO transparent Conductive films Sol-gel spin coating Electrical property Optical property |
| title | Fluorine, chlorine, and gallium co-doped zinc oxide transparent conductive films fabricated using the sol-gel spin method |
| title_full | Fluorine, chlorine, and gallium co-doped zinc oxide transparent conductive films fabricated using the sol-gel spin method |
| title_fullStr | Fluorine, chlorine, and gallium co-doped zinc oxide transparent conductive films fabricated using the sol-gel spin method |
| title_full_unstemmed | Fluorine, chlorine, and gallium co-doped zinc oxide transparent conductive films fabricated using the sol-gel spin method |
| title_short | Fluorine, chlorine, and gallium co-doped zinc oxide transparent conductive films fabricated using the sol-gel spin method |
| title_sort | fluorine chlorine and gallium co doped zinc oxide transparent conductive films fabricated using the sol gel spin method |
| topic | ZnO transparent Conductive films Sol-gel spin coating Electrical property Optical property |
| url | http://www.sciencedirect.com/science/article/pii/S2352847823000321 |
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