Photoluminescence and Raman mapping of β-Ga2O3
The semi-insulating single crystal β-Ga2O3 is becoming increasingly useful as a substrate for device fabrication. Fe doping is a method for producing such substrates. Along with Fe dopants, β-Ga2O3:Fe also contains Cr3+. Photoluminescence (PL) emission peaks at 690 nm (1.80 eV) and 696 nm (1.78 eV),...
| Hlavní autoři: | , , |
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| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
AIP Publishing LLC
2021-10-01
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| Edice: | AIP Advances |
| On-line přístup: | http://dx.doi.org/10.1063/5.0065618 |