Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation
Abstract The current information technology has been developed based on von Neumann type computation. In order to sustain the rate of development, it is essential to investigate alternative technologies. In a next-generation computation, an important feature is memory potentiation, which has been ov...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2021-08-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-021-96706-9 |
| _version_ | 1830207710239391744 |
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| author | William Frost Kelvin Elphick Marjan Samiepour Atsufumi Hirohata |
| author_facet | William Frost Kelvin Elphick Marjan Samiepour Atsufumi Hirohata |
| author_sort | William Frost |
| collection | DOAJ |
| description | Abstract The current information technology has been developed based on von Neumann type computation. In order to sustain the rate of development, it is essential to investigate alternative technologies. In a next-generation computation, an important feature is memory potentiation, which has been overlooked to date. In this study, potentiation functionality is demonstrated in a giant magnetoresistive (GMR) junction consisting of a half-metallic Heusler alloy which can be a candidate of an artificial synapse while still achieving a low resistance-area product for low power consumption. Here the Heusler alloy films are grown on a (110) surface to promote layer-by-layer growth to reduce their crystallisation energy, which is comparable with Joule heating induced by a controlled current introduction. The current-induced crystallisation leads to the reduction in the corresponding resistivity, which acts as memory potentiation for an artificial GMR synaptic junction. |
| first_indexed | 2024-12-18T04:35:45Z |
| format | Article |
| id | doaj.art-bc50515b620c4b5b9d8337d356b76339 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-18T04:35:45Z |
| publishDate | 2021-08-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-bc50515b620c4b5b9d8337d356b763392022-12-21T21:20:52ZengNature PortfolioScientific Reports2045-23222021-08-011111510.1038/s41598-021-96706-9Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computationWilliam Frost0Kelvin Elphick1Marjan Samiepour2Atsufumi Hirohata3Department of Physics, University of YorkDepartment of Electronic Engineering, University of YorkDepartment of Electronic Engineering, University of YorkDepartment of Electronic Engineering, University of YorkAbstract The current information technology has been developed based on von Neumann type computation. In order to sustain the rate of development, it is essential to investigate alternative technologies. In a next-generation computation, an important feature is memory potentiation, which has been overlooked to date. In this study, potentiation functionality is demonstrated in a giant magnetoresistive (GMR) junction consisting of a half-metallic Heusler alloy which can be a candidate of an artificial synapse while still achieving a low resistance-area product for low power consumption. Here the Heusler alloy films are grown on a (110) surface to promote layer-by-layer growth to reduce their crystallisation energy, which is comparable with Joule heating induced by a controlled current introduction. The current-induced crystallisation leads to the reduction in the corresponding resistivity, which acts as memory potentiation for an artificial GMR synaptic junction.https://doi.org/10.1038/s41598-021-96706-9 |
| spellingShingle | William Frost Kelvin Elphick Marjan Samiepour Atsufumi Hirohata Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation Scientific Reports |
| title | Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation |
| title_full | Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation |
| title_fullStr | Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation |
| title_full_unstemmed | Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation |
| title_short | Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation |
| title_sort | current induced crystallisation in heusler alloy films for memory potentiation in neuromorphic computation |
| url | https://doi.org/10.1038/s41598-021-96706-9 |
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