ZnO-Based Ultraviolet Photodetectors
Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV p...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2010-09-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1424-8220/10/9/8604/ |
| _version_ | 1811306587750400000 |
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| author | Masakazu Aono Makoto Sakurai Kewei Liu |
| author_facet | Masakazu Aono Makoto Sakurai Kewei Liu |
| author_sort | Masakazu Aono |
| collection | DOAJ |
| description | Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes and p–n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance of ZnO-based photodetectors, discussing recent achievements, and comparing the characteristics of the various photodetector structures developed to date. |
| first_indexed | 2024-04-13T08:48:04Z |
| format | Article |
| id | doaj.art-bc562d0953a34ca485f6eba82c15910a |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-13T08:48:04Z |
| publishDate | 2010-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-bc562d0953a34ca485f6eba82c15910a2022-12-22T02:53:37ZengMDPI AGSensors1424-82202010-09-011098604863410.3390/s100908604ZnO-Based Ultraviolet PhotodetectorsMasakazu AonoMakoto SakuraiKewei LiuUltraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes and p–n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance of ZnO-based photodetectors, discussing recent achievements, and comparing the characteristics of the various photodetector structures developed to date.http://www.mdpi.com/1424-8220/10/9/8604/ZnOphotodetectorMSMp-n junctionSchottkyresponse |
| spellingShingle | Masakazu Aono Makoto Sakurai Kewei Liu ZnO-Based Ultraviolet Photodetectors Sensors ZnO photodetector MSM p-n junction Schottky response |
| title | ZnO-Based Ultraviolet Photodetectors |
| title_full | ZnO-Based Ultraviolet Photodetectors |
| title_fullStr | ZnO-Based Ultraviolet Photodetectors |
| title_full_unstemmed | ZnO-Based Ultraviolet Photodetectors |
| title_short | ZnO-Based Ultraviolet Photodetectors |
| title_sort | zno based ultraviolet photodetectors |
| topic | ZnO photodetector MSM p-n junction Schottky response |
| url | http://www.mdpi.com/1424-8220/10/9/8604/ |
| work_keys_str_mv | AT masakazuaono znobasedultravioletphotodetectors AT makotosakurai znobasedultravioletphotodetectors AT keweiliu znobasedultravioletphotodetectors |