Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub>2</sub> Nanofilms
In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub>2</sub> nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films,...
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MDPI AG
2023-02-01
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author | Hong Su Zesong Zheng Zhisheng Yu Shiping Feng Huiting Lan Shixing Wang Min Zhang Ling Li Huawei Liang |
author_facet | Hong Su Zesong Zheng Zhisheng Yu Shiping Feng Huiting Lan Shixing Wang Min Zhang Ling Li Huawei Liang |
author_sort | Hong Su |
collection | DOAJ |
description | In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub>2</sub> nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub>2</sub> nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i>ω<sub>p</sub></i> of 0.23 THz and a lower scattering time <i>τ<sub>s</sub></i> of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub>2</sub> film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup>2</sup>. This work proves that PtSe<sub>2</sub> nanofilm devices are suitable for terahertz modulators. |
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spelling | doaj.art-bc64a600439f4bea96ccb9d9d9824b642023-11-17T08:16:32ZengMDPI AGNanomaterials2079-49912023-02-0113579510.3390/nano13050795Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub>2</sub> NanofilmsHong Su0Zesong Zheng1Zhisheng Yu2Shiping Feng3Huiting Lan4Shixing Wang5Min Zhang6Ling Li7Huawei Liang8Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, ChinaKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, ChinaIn this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub>2</sub> nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub>2</sub> nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i>ω<sub>p</sub></i> of 0.23 THz and a lower scattering time <i>τ<sub>s</sub></i> of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub>2</sub> film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup>2</sup>. This work proves that PtSe<sub>2</sub> nanofilm devices are suitable for terahertz modulators.https://www.mdpi.com/2079-4991/13/5/795terahertzmodulatorphotoconductivityPtSe<sub>2</sub> |
spellingShingle | Hong Su Zesong Zheng Zhisheng Yu Shiping Feng Huiting Lan Shixing Wang Min Zhang Ling Li Huawei Liang Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub>2</sub> Nanofilms Nanomaterials terahertz modulator photoconductivity PtSe<sub>2</sub> |
title | Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub>2</sub> Nanofilms |
title_full | Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub>2</sub> Nanofilms |
title_fullStr | Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub>2</sub> Nanofilms |
title_full_unstemmed | Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub>2</sub> Nanofilms |
title_short | Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub>2</sub> Nanofilms |
title_sort | optically controlling broadband terahertz modulator based on layer dependent ptse sub 2 sub nanofilms |
topic | terahertz modulator photoconductivity PtSe<sub>2</sub> |
url | https://www.mdpi.com/2079-4991/13/5/795 |
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