Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices
Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-01-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-4991/8/2/77 |
| _version_ | 1819153239008870400 |
|---|---|
| author | Zhe Ma Yang Liu Lingxiao Deng Mingliang Zhang Shuyuan Zhang Jing Ma Peishuai Song Qing Liu An Ji Fuhua Yang Xiaodong Wang |
| author_facet | Zhe Ma Yang Liu Lingxiao Deng Mingliang Zhang Shuyuan Zhang Jing Ma Peishuai Song Qing Liu An Ji Fuhua Yang Xiaodong Wang |
| author_sort | Zhe Ma |
| collection | DOAJ |
| description | Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity. |
| first_indexed | 2024-12-22T15:02:01Z |
| format | Article |
| id | doaj.art-bc7246e8bf53410f906af1bcb9f9c790 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-22T15:02:01Z |
| publishDate | 2018-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-bc7246e8bf53410f906af1bcb9f9c7902022-12-21T18:22:06ZengMDPI AGNanomaterials2079-49912018-01-01827710.3390/nano8020077nano8020077Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric DevicesZhe Ma0Yang Liu1Lingxiao Deng2Mingliang Zhang3Shuyuan Zhang4Jing Ma5Peishuai Song6Qing Liu7An Ji8Fuhua Yang9Xiaodong Wang10Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaHeavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity.http://www.mdpi.com/2079-4991/8/2/77heavily boron-doped silicon layerboron etch-stopthermoelectricsilicon nanowireZTnanostructures |
| spellingShingle | Zhe Ma Yang Liu Lingxiao Deng Mingliang Zhang Shuyuan Zhang Jing Ma Peishuai Song Qing Liu An Ji Fuhua Yang Xiaodong Wang Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices Nanomaterials heavily boron-doped silicon layer boron etch-stop thermoelectric silicon nanowire ZT nanostructures |
| title | Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices |
| title_full | Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices |
| title_fullStr | Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices |
| title_full_unstemmed | Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices |
| title_short | Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices |
| title_sort | heavily boron doped silicon layer for the fabrication of nanoscale thermoelectric devices |
| topic | heavily boron-doped silicon layer boron etch-stop thermoelectric silicon nanowire ZT nanostructures |
| url | http://www.mdpi.com/2079-4991/8/2/77 |
| work_keys_str_mv | AT zhema heavilyborondopedsiliconlayerforthefabricationofnanoscalethermoelectricdevices AT yangliu heavilyborondopedsiliconlayerforthefabricationofnanoscalethermoelectricdevices AT lingxiaodeng heavilyborondopedsiliconlayerforthefabricationofnanoscalethermoelectricdevices AT mingliangzhang heavilyborondopedsiliconlayerforthefabricationofnanoscalethermoelectricdevices AT shuyuanzhang heavilyborondopedsiliconlayerforthefabricationofnanoscalethermoelectricdevices AT jingma heavilyborondopedsiliconlayerforthefabricationofnanoscalethermoelectricdevices AT peishuaisong heavilyborondopedsiliconlayerforthefabricationofnanoscalethermoelectricdevices AT qingliu heavilyborondopedsiliconlayerforthefabricationofnanoscalethermoelectricdevices AT anji heavilyborondopedsiliconlayerforthefabricationofnanoscalethermoelectricdevices AT fuhuayang heavilyborondopedsiliconlayerforthefabricationofnanoscalethermoelectricdevices AT xiaodongwang heavilyborondopedsiliconlayerforthefabricationofnanoscalethermoelectricdevices |