Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon...

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Bibliographic Details
Main Authors: Zhe Ma, Yang Liu, Lingxiao Deng, Mingliang Zhang, Shuyuan Zhang, Jing Ma, Peishuai Song, Qing Liu, An Ji, Fuhua Yang, Xiaodong Wang
Format: Article
Language:English
Published: MDPI AG 2018-01-01
Series:Nanomaterials
Subjects:
heavily boron-doped silicon layer
boron etch-stop
thermoelectric
silicon nanowire
ZT
nanostructures
Online Access:http://www.mdpi.com/2079-4991/8/2/77

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