Inverted Polymer Solar Cells Using Inkjet Printed ZnO as Electron Transport Layer: Characterization and Degradation Study
In this work, stability and degradation of inverted organic solar cells (iOSCs) partially manufactured under air environment are analyzed. The degradation of iOSCs fabricated with inkjet printed ZnO and with spin coated PFN as electron transport layer (ETL) is compared. The PTB7 and PC<sub>70&...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8963720/ |
| _version_ | 1818457679062892544 |
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| author | Angel Sacramento Magaly Ramirez-Como Victor S. Balderrama Salvador I. Garduno Magali Estrada Lluis F. Marsal |
| author_facet | Angel Sacramento Magaly Ramirez-Como Victor S. Balderrama Salvador I. Garduno Magali Estrada Lluis F. Marsal |
| author_sort | Angel Sacramento |
| collection | DOAJ |
| description | In this work, stability and degradation of inverted organic solar cells (iOSCs) partially manufactured under air environment are analyzed. The degradation of iOSCs fabricated with inkjet printed ZnO and with spin coated PFN as electron transport layer (ETL) is compared. The PTB7 and PC<sub>70</sub>BM materials are used as donor and acceptor in the active layer, respectively, for all photovoltaic devices. During all the degradation study of the iOSCs, performance parameters such as open circuit voltage (V<sub>OC</sub>), short circuit current density (J<sub>SC</sub>), fill factor (FF) and Power conversion efficiency (PCE), are extracted from the current density - voltage measurements (J-V) under dark and light conditions. The PCE of the unencapsulated iOSCs with PFN as ETL, left under N2, decreased to 80% after 58 h, while the same PCE reduction for iOSCs with inkjet printed ZnO as ETL, occurred after 189 h. Under air environment, the PCE of unencapsulated iOSCs fabricated with ZnO as ETL devices decreases to 80% after 160 h. |
| first_indexed | 2024-12-14T22:46:23Z |
| format | Article |
| id | doaj.art-bc77041a622d41ec87c0145a733f1e2e |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T22:46:23Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-bc77041a622d41ec87c0145a733f1e2e2022-12-21T22:44:50ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01841342010.1109/JEDS.2020.29680018963720Inverted Polymer Solar Cells Using Inkjet Printed ZnO as Electron Transport Layer: Characterization and Degradation StudyAngel Sacramento0https://orcid.org/0000-0001-5207-3154Magaly Ramirez-Como1https://orcid.org/0000-0002-9313-8337Victor S. Balderrama2https://orcid.org/0000-0003-4617-0550Salvador I. Garduno3https://orcid.org/0000-0003-0101-6285Magali Estrada4Lluis F. Marsal5https://orcid.org/0000-0002-5976-1408Departamento de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido, CINVESTAV, Mexico City, MexicoDepartamento de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido, CINVESTAV, Mexico City, MexicoMicrotechnology Division, CONACYT—Center for Engineering and Industrial Development (CIDESI), Santiago de Querétaro, MexicoDepartamento de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido, CINVESTAV, Mexico City, MexicoDepartamento de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido, CINVESTAV, Mexico City, MexicoDepartament d’Enginyeria Electronica Electrica i Automatica, Rovira i Virgili University, Tarragona, SpainIn this work, stability and degradation of inverted organic solar cells (iOSCs) partially manufactured under air environment are analyzed. The degradation of iOSCs fabricated with inkjet printed ZnO and with spin coated PFN as electron transport layer (ETL) is compared. The PTB7 and PC<sub>70</sub>BM materials are used as donor and acceptor in the active layer, respectively, for all photovoltaic devices. During all the degradation study of the iOSCs, performance parameters such as open circuit voltage (V<sub>OC</sub>), short circuit current density (J<sub>SC</sub>), fill factor (FF) and Power conversion efficiency (PCE), are extracted from the current density - voltage measurements (J-V) under dark and light conditions. The PCE of the unencapsulated iOSCs with PFN as ETL, left under N2, decreased to 80% after 58 h, while the same PCE reduction for iOSCs with inkjet printed ZnO as ETL, occurred after 189 h. Under air environment, the PCE of unencapsulated iOSCs fabricated with ZnO as ETL devices decreases to 80% after 160 h.https://ieeexplore.ieee.org/document/8963720/Air environmentdegradation studyinkjet printed ZnOiOSCsperformance parametersstability |
| spellingShingle | Angel Sacramento Magaly Ramirez-Como Victor S. Balderrama Salvador I. Garduno Magali Estrada Lluis F. Marsal Inverted Polymer Solar Cells Using Inkjet Printed ZnO as Electron Transport Layer: Characterization and Degradation Study IEEE Journal of the Electron Devices Society Air environment degradation study inkjet printed ZnO iOSCs performance parameters stability |
| title | Inverted Polymer Solar Cells Using Inkjet Printed ZnO as Electron Transport Layer: Characterization and Degradation Study |
| title_full | Inverted Polymer Solar Cells Using Inkjet Printed ZnO as Electron Transport Layer: Characterization and Degradation Study |
| title_fullStr | Inverted Polymer Solar Cells Using Inkjet Printed ZnO as Electron Transport Layer: Characterization and Degradation Study |
| title_full_unstemmed | Inverted Polymer Solar Cells Using Inkjet Printed ZnO as Electron Transport Layer: Characterization and Degradation Study |
| title_short | Inverted Polymer Solar Cells Using Inkjet Printed ZnO as Electron Transport Layer: Characterization and Degradation Study |
| title_sort | inverted polymer solar cells using inkjet printed zno as electron transport layer characterization and degradation study |
| topic | Air environment degradation study inkjet printed ZnO iOSCs performance parameters stability |
| url | https://ieeexplore.ieee.org/document/8963720/ |
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