Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors
This study investigates the influence of self-assembled monolayer treatment of gate insulators on the electrical characteristics of bottom-gate/bottom-contact organic field-effect transistors (OFETs) with short channel lengths of 5 μm to 30 nm. The treatment of 3-chloropropyltrichlorosilane (...
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MDPI AG
2018-08-01
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| Series: | Applied Sciences |
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| Online Access: | http://www.mdpi.com/2076-3417/8/8/1274 |
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| author | Takashi Nagase Takeshi Hirose Takashi Kobayashi Rieko Ueda Akira Otomo Hiroyoshi Naito |
| author_facet | Takashi Nagase Takeshi Hirose Takashi Kobayashi Rieko Ueda Akira Otomo Hiroyoshi Naito |
| author_sort | Takashi Nagase |
| collection | DOAJ |
| description | This study investigates the influence of self-assembled monolayer treatment of gate insulators on the electrical characteristics of bottom-gate/bottom-contact organic field-effect transistors (OFETs) with short channel lengths of 5 μm to 30 nm. The treatment of 3-chloropropyltrichlorosilane (CPTS) with large dipoles produces a high built-in electric field perpendicular to the SiO2 gate insulator surface, which results in a threshold voltage shift and enhanced hole injection compared to the treatment of phenethyltrichlorosilane (PETS) with small dipoles. Pronounced parabolic drain current‒voltage (ID‒VD) characteristics due to a space-charge limited current are observed in short-channel OFETs based on poly(3-hexylthiophene) with CPTS-treated gate insulators. CPTS treatment on short-channel OFETs based on poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) suppresses the nonlinear ID increase in the low VD region caused by the voltage drop at the Au/F8T2 contact. The influence of the increase in the net source-drain electric field associated with the reduced voltage drops on the channel-length dependence of the field-effect mobility of short-channel F8T2 FETs is also discussed. |
| first_indexed | 2024-12-11T08:51:53Z |
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| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-12-11T08:51:53Z |
| publishDate | 2018-08-01 |
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| spelling | doaj.art-bc7a4c98c77540ab8feee298a893354a2022-12-22T01:14:00ZengMDPI AGApplied Sciences2076-34172018-08-0188127410.3390/app8081274app8081274Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect TransistorsTakashi Nagase0Takeshi Hirose1Takashi Kobayashi2Rieko Ueda3Akira Otomo4Hiroyoshi Naito5Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, JapanDepartment of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, JapanDepartment of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, JapanAdvanced ICT Research Institute, National Institute of Information and Communications Technology, Kobe 651-2492, JapanAdvanced ICT Research Institute, National Institute of Information and Communications Technology, Kobe 651-2492, JapanDepartment of Physics and Electronics, Osaka Prefecture University, Sakai 599-8531, JapanThis study investigates the influence of self-assembled monolayer treatment of gate insulators on the electrical characteristics of bottom-gate/bottom-contact organic field-effect transistors (OFETs) with short channel lengths of 5 μm to 30 nm. The treatment of 3-chloropropyltrichlorosilane (CPTS) with large dipoles produces a high built-in electric field perpendicular to the SiO2 gate insulator surface, which results in a threshold voltage shift and enhanced hole injection compared to the treatment of phenethyltrichlorosilane (PETS) with small dipoles. Pronounced parabolic drain current‒voltage (ID‒VD) characteristics due to a space-charge limited current are observed in short-channel OFETs based on poly(3-hexylthiophene) with CPTS-treated gate insulators. CPTS treatment on short-channel OFETs based on poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) suppresses the nonlinear ID increase in the low VD region caused by the voltage drop at the Au/F8T2 contact. The influence of the increase in the net source-drain electric field associated with the reduced voltage drops on the channel-length dependence of the field-effect mobility of short-channel F8T2 FETs is also discussed.http://www.mdpi.com/2076-3417/8/8/1274organic field-effect transistorshort-channel effectself-assembled monolayerdipole electric field |
| spellingShingle | Takashi Nagase Takeshi Hirose Takashi Kobayashi Rieko Ueda Akira Otomo Hiroyoshi Naito Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors Applied Sciences organic field-effect transistor short-channel effect self-assembled monolayer dipole electric field |
| title | Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors |
| title_full | Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors |
| title_fullStr | Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors |
| title_full_unstemmed | Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors |
| title_short | Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors |
| title_sort | influence of substrate modification with dipole monolayers on the electrical characteristics of short channel polymer field effect transistors |
| topic | organic field-effect transistor short-channel effect self-assembled monolayer dipole electric field |
| url | http://www.mdpi.com/2076-3417/8/8/1274 |
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