Selected Problems of Power MOSFETs Thermal Parameters Measurements

In the paper, selected problems that are related to the measurements of thermal parameters of power MOSFETs that are placed on a common heat sink are analysed. The application of the indirect electrical method, the contact method, and the optical method in measuring self and mutual transient thermal...

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Main Authors: Krzysztof Górecki, Krzysztof Posobkiewicz
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Energies
Subjects:
Online Access:https://www.mdpi.com/1996-1073/14/24/8353
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author Krzysztof Górecki
Krzysztof Posobkiewicz
author_facet Krzysztof Górecki
Krzysztof Posobkiewicz
author_sort Krzysztof Górecki
collection DOAJ
description In the paper, selected problems that are related to the measurements of thermal parameters of power MOSFETs that are placed on a common heat sink are analysed. The application of the indirect electrical method, the contact method, and the optical method in measuring self and mutual transient thermal impedances of these transistors is presented. The circuits that are required to perform measurements are presented and described. The errors of measurements are assessed for each of the considered methods. In the case of the indirect electrical method, an additional influence of the selection of a thermo-sensitive parameter and the function approximating thermometric characteristics on the measurement error are taken into consideration. The measurement results of the thermal parameters of the investigated transistors that were obtained using the considered measurement methods in various supply conditions are presented and discussed.
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spelling doaj.art-bc9d2607e06f4662ae286b8acc9881372023-11-23T08:06:07ZengMDPI AGEnergies1996-10732021-12-011424835310.3390/en14248353Selected Problems of Power MOSFETs Thermal Parameters MeasurementsKrzysztof Górecki0Krzysztof Posobkiewicz1Department of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, PolandDepartment of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, PolandIn the paper, selected problems that are related to the measurements of thermal parameters of power MOSFETs that are placed on a common heat sink are analysed. The application of the indirect electrical method, the contact method, and the optical method in measuring self and mutual transient thermal impedances of these transistors is presented. The circuits that are required to perform measurements are presented and described. The errors of measurements are assessed for each of the considered methods. In the case of the indirect electrical method, an additional influence of the selection of a thermo-sensitive parameter and the function approximating thermometric characteristics on the measurement error are taken into consideration. The measurement results of the thermal parameters of the investigated transistors that were obtained using the considered measurement methods in various supply conditions are presented and discussed.https://www.mdpi.com/1996-1073/14/24/8353thermal resistancetransient thermal impedancethermal parameterspower MOSFETsmeasurements
spellingShingle Krzysztof Górecki
Krzysztof Posobkiewicz
Selected Problems of Power MOSFETs Thermal Parameters Measurements
Energies
thermal resistance
transient thermal impedance
thermal parameters
power MOSFETs
measurements
title Selected Problems of Power MOSFETs Thermal Parameters Measurements
title_full Selected Problems of Power MOSFETs Thermal Parameters Measurements
title_fullStr Selected Problems of Power MOSFETs Thermal Parameters Measurements
title_full_unstemmed Selected Problems of Power MOSFETs Thermal Parameters Measurements
title_short Selected Problems of Power MOSFETs Thermal Parameters Measurements
title_sort selected problems of power mosfets thermal parameters measurements
topic thermal resistance
transient thermal impedance
thermal parameters
power MOSFETs
measurements
url https://www.mdpi.com/1996-1073/14/24/8353
work_keys_str_mv AT krzysztofgorecki selectedproblemsofpowermosfetsthermalparametersmeasurements
AT krzysztofposobkiewicz selectedproblemsofpowermosfetsthermalparametersmeasurements