Silicon p-i-n Mesa-Photodiode Technology
The paper proposes the technology of silicon p-i-n mesa-photodiodes, which allows to exclude one high-temperature operation from the technological route. Reducing the number of thermal operations reduces the degree of degradation of the electro-physical characteristics of silicon during heat treatme...
| Autores principales: | , , |
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| Formato: | Artículo |
| Lenguaje: | English |
| Publicado: |
V.N. Karazin Kharkiv National University Publishing
2024-09-01
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| Colección: | East European Journal of Physics |
| Materias: | |
| Acceso en línea: | https://periodicals.karazin.ua/eejp/article/view/23784 |