Spectral stability of V2 centres in sub-micron 4H-SiC membranes
Abstract Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences. However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced s...
Main Authors: | Jonah Heiler, Jonathan Körber, Erik Hesselmeier, Pierre Kuna, Rainer Stöhr, Philipp Fuchs, Misagh Ghezellou, Jawad Ul-Hassan, Wolfgang Knolle, Christoph Becher, Florian Kaiser, Jörg Wrachtrup |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Portfolio
2024-04-01
|
Series: | npj Quantum Materials |
Online Access: | https://doi.org/10.1038/s41535-024-00644-4 |
Similar Items
-
Author Correction: Spectral stability of V2 centres in sub-micron 4H-SiC membranes
by: Jonah Heiler, et al.
Published: (2024-04-01) -
The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics
by: Di Liu, et al.
Published: (2024-07-01) -
Influence of different hydrocarbons on impurities and minority carrier lifetime in 4H-SiC epitaxial layers
by: Misagh Ghezellou, et al.
Published: (2025-01-01) -
The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers
by: Misagh Ghezellou, et al.
Published: (2023-03-01) -
Influence of Carbon Cap on Self-Diffusion in Silicon Carbide
by: Marianne Etzelmüller Bathen, et al.
Published: (2020-08-01)