Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules
The overheating stress of power devices is the main cause of converter system failures, so real-time temperature acquisition, as well as timely over-temperature protection, under various operating conditions are key to achieving a more reliable energy conversion. In this paper, an improved three-dim...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9745121/ |
| _version_ | 1811260312474615808 |
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| author | Qiang Wang Jingwei Zhang Francesco Iannuzzo Amir Sajjad Bahman Weifeng Zhang Fengyou He |
| author_facet | Qiang Wang Jingwei Zhang Francesco Iannuzzo Amir Sajjad Bahman Weifeng Zhang Fengyou He |
| author_sort | Qiang Wang |
| collection | DOAJ |
| description | The overheating stress of power devices is the main cause of converter system failures, so real-time temperature acquisition, as well as timely over-temperature protection, under various operating conditions are key to achieving a more reliable energy conversion. In this paper, an improved three-dimensional (3-D) coupled thermal model for insulated gate bipolar transistors (IGBTs) and related heatsink is constructed by considering the thermal coupling effects at both the device- and the module level. Furthermore, the coupled thermal impedance parameters are thereby extracted based on the finite-element method (FEM), so that the dynamic loss and transient temperature distribution under actual working conditions can be obtained based on this electro-thermal coupling model. Meanwhile, to avoid the overheating damage of power devices due to untimely action of the negative temperature coefficient (NTC) thermistor over-temperature protection, this article aims at the idle IGBT device in the three-level neutral-point clamped (NPC) application using IGBT half-bridge modules, combined with the emitter terminal temperature, and finally realizes the multiple over-temperature protection settings. The improved temperature monitoring methods proposed in this paper are realized by the drive and control circuits and verified through simulation and experimental results. |
| first_indexed | 2024-04-12T18:45:35Z |
| format | Article |
| id | doaj.art-bcf009659c6b44e6b0f52b64d5c412aa |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-04-12T18:45:35Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-bcf009659c6b44e6b0f52b64d5c412aa2022-12-22T03:20:38ZengIEEEIEEE Access2169-35362022-01-0110356053561910.1109/ACCESS.2022.31633139745121Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT ModulesQiang Wang0https://orcid.org/0000-0002-5157-8801Jingwei Zhang1Francesco Iannuzzo2Amir Sajjad Bahman3Weifeng Zhang4Fengyou He5https://orcid.org/0000-0002-5341-3955School of Electrical Engineering, China University of Mining and Technology, Xuzhou, ChinaSchool of Electrical Engineering, China University of Mining and Technology, Xuzhou, ChinaCenter of Reliable Power Electronics (CORPE), Aalborg University (AAU), Aalborg, DenmarkCenter of Reliable Power Electronics (CORPE), Aalborg University (AAU), Aalborg, DenmarkSchool of Electrical Engineering, China University of Mining and Technology, Xuzhou, ChinaSchool of Electrical Engineering, China University of Mining and Technology, Xuzhou, ChinaThe overheating stress of power devices is the main cause of converter system failures, so real-time temperature acquisition, as well as timely over-temperature protection, under various operating conditions are key to achieving a more reliable energy conversion. In this paper, an improved three-dimensional (3-D) coupled thermal model for insulated gate bipolar transistors (IGBTs) and related heatsink is constructed by considering the thermal coupling effects at both the device- and the module level. Furthermore, the coupled thermal impedance parameters are thereby extracted based on the finite-element method (FEM), so that the dynamic loss and transient temperature distribution under actual working conditions can be obtained based on this electro-thermal coupling model. Meanwhile, to avoid the overheating damage of power devices due to untimely action of the negative temperature coefficient (NTC) thermistor over-temperature protection, this article aims at the idle IGBT device in the three-level neutral-point clamped (NPC) application using IGBT half-bridge modules, combined with the emitter terminal temperature, and finally realizes the multiple over-temperature protection settings. The improved temperature monitoring methods proposed in this paper are realized by the drive and control circuits and verified through simulation and experimental results.https://ieeexplore.ieee.org/document/9745121/Reliabilityhalf-bridge IGBT modulethree-level NPC topologytemperature monitoringover-temperature protection |
| spellingShingle | Qiang Wang Jingwei Zhang Francesco Iannuzzo Amir Sajjad Bahman Weifeng Zhang Fengyou He Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules IEEE Access Reliability half-bridge IGBT module three-level NPC topology temperature monitoring over-temperature protection |
| title | Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules |
| title_full | Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules |
| title_fullStr | Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules |
| title_full_unstemmed | Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules |
| title_short | Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules |
| title_sort | improved temperature monitoring and protection method of three level npc application based on half bridge igbt modules |
| topic | Reliability half-bridge IGBT module three-level NPC topology temperature monitoring over-temperature protection |
| url | https://ieeexplore.ieee.org/document/9745121/ |
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