Bias-modulated switching in Chern insulator
The Chern insulator manifests itself via the surface quantized Hall current and magnetoelectric effect. The manipulation of surface magnetizations enables a control of the dissipationless chiral transport and thus allows for potential applications of topological magnetoelectric devices with low-ener...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2022-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/ac8896 |
| _version_ | 1797748448612581376 |
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| author | Yu Huang Huimin Sun Mengyun He Yu Fu Peng Zhang Kang L Wang Qing Lin He |
| author_facet | Yu Huang Huimin Sun Mengyun He Yu Fu Peng Zhang Kang L Wang Qing Lin He |
| author_sort | Yu Huang |
| collection | DOAJ |
| description | The Chern insulator manifests itself via the surface quantized Hall current and magnetoelectric effect. The manipulation of surface magnetizations enables a control of the dissipationless chiral transport and thus allows for potential applications of topological magnetoelectric devices with low-energy consumption. Here, we present experimental studies of bias-modulated switching the magnetic states utilizing the magnetoelectric coupling in a Chern insulator. This is achieved via applying a d.c. bias across the source and drain at various magnetic states, during which an effective magnetic field is developed to switch the quantum anomalous Hall state towards its opposite. Comprehensive transport studies show that the switch efficiency is proportional to the amplitude and applying time of the bias, depends on the initial magnetic state, but is insensitive to the electric polarity. Our results provide an efficient scheme to manipulate the Chern insulator and understanding on the electric breakdown of chiral edge states. |
| first_indexed | 2024-03-12T16:05:53Z |
| format | Article |
| id | doaj.art-bcfb62e69b0c43fdaf31d5232f752fe3 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:05:53Z |
| publishDate | 2022-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-bcfb62e69b0c43fdaf31d5232f752fe32023-08-09T14:23:20ZengIOP PublishingNew Journal of Physics1367-26302022-01-0124808303610.1088/1367-2630/ac8896Bias-modulated switching in Chern insulatorYu Huang0Huimin Sun1Mengyun He2Yu Fu3Peng Zhang4Kang L Wang5Qing Lin He6International Center for Quantum Materials, School of Physics, Peking University , Beijing 100871, People’s Republic of China; Collaborative Innovation Center of Quantum Matter , Beijing 100871, People’s Republic of China; Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University , Beijing 100871, People’s Republic of ChinaInternational Center for Quantum Materials, School of Physics, Peking University , Beijing 100871, People’s Republic of China; Collaborative Innovation Center of Quantum Matter , Beijing 100871, People’s Republic of China; Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University , Beijing 100871, People’s Republic of ChinaInternational Center for Quantum Materials, School of Physics, Peking University , Beijing 100871, People’s Republic of China; Collaborative Innovation Center of Quantum Matter , Beijing 100871, People’s Republic of China; Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University , Beijing 100871, People’s Republic of ChinaInternational Center for Quantum Materials, School of Physics, Peking University , Beijing 100871, People’s Republic of China; Collaborative Innovation Center of Quantum Matter , Beijing 100871, People’s Republic of China; Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University , Beijing 100871, People’s Republic of ChinaDepartment of Electrical and Computer Engineering, Department of Physics and Astronomy, and Department of Materials Science and Engineering, University of California , Los Angeles, CA 90095, United States of AmericaDepartment of Electrical and Computer Engineering, Department of Physics and Astronomy, and Department of Materials Science and Engineering, University of California , Los Angeles, CA 90095, United States of AmericaInternational Center for Quantum Materials, School of Physics, Peking University , Beijing 100871, People’s Republic of China; Collaborative Innovation Center of Quantum Matter , Beijing 100871, People’s Republic of China; Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University , Beijing 100871, People’s Republic of ChinaThe Chern insulator manifests itself via the surface quantized Hall current and magnetoelectric effect. The manipulation of surface magnetizations enables a control of the dissipationless chiral transport and thus allows for potential applications of topological magnetoelectric devices with low-energy consumption. Here, we present experimental studies of bias-modulated switching the magnetic states utilizing the magnetoelectric coupling in a Chern insulator. This is achieved via applying a d.c. bias across the source and drain at various magnetic states, during which an effective magnetic field is developed to switch the quantum anomalous Hall state towards its opposite. Comprehensive transport studies show that the switch efficiency is proportional to the amplitude and applying time of the bias, depends on the initial magnetic state, but is insensitive to the electric polarity. Our results provide an efficient scheme to manipulate the Chern insulator and understanding on the electric breakdown of chiral edge states.https://doi.org/10.1088/1367-2630/ac8896Chern insulatorsquantum anomalous Hall effectmagnetoelectric couplingchiral edge statequantum transport |
| spellingShingle | Yu Huang Huimin Sun Mengyun He Yu Fu Peng Zhang Kang L Wang Qing Lin He Bias-modulated switching in Chern insulator New Journal of Physics Chern insulators quantum anomalous Hall effect magnetoelectric coupling chiral edge state quantum transport |
| title | Bias-modulated switching in Chern insulator |
| title_full | Bias-modulated switching in Chern insulator |
| title_fullStr | Bias-modulated switching in Chern insulator |
| title_full_unstemmed | Bias-modulated switching in Chern insulator |
| title_short | Bias-modulated switching in Chern insulator |
| title_sort | bias modulated switching in chern insulator |
| topic | Chern insulators quantum anomalous Hall effect magnetoelectric coupling chiral edge state quantum transport |
| url | https://doi.org/10.1088/1367-2630/ac8896 |
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