Structural Properties of Post Annealed ITO Thin Films at Different Temperatures
Indium tin oxide (ITO) thin films were deposited on glass substrates by RF sputtering using an ITO ceramic target (In2O3-SnO2, 90-10 wt. %). After deposition, samples were annealed at different temperatures in vacuum furnace. The post vacuum annealing effects on the structural, optical and electrica...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Iranian Institute of Research and Development in Chemical Industries (IRDCI)-ACECR
2009-06-01
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| Series: | Iranian Journal of Chemistry & Chemical Engineering |
| Subjects: | |
| Online Access: | http://www.ijcce.ac.ir/article_13367_57e82bba5ea40f0a1abcca4c2b74c47f.pdf |
| _version_ | 1828411105556299776 |
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| author | Negin Manavizadeh Alireza Khodayari Ebrahim Asl Soleimani Sheida Bagherzadeh Mohammad Hadi Maleki |
| author_facet | Negin Manavizadeh Alireza Khodayari Ebrahim Asl Soleimani Sheida Bagherzadeh Mohammad Hadi Maleki |
| author_sort | Negin Manavizadeh |
| collection | DOAJ |
| description | Indium tin oxide (ITO) thin films were deposited on glass substrates by RF sputtering using an ITO ceramic target (In2O3-SnO2, 90-10 wt. %). After deposition, samples were annealed at different temperatures in vacuum furnace. The post vacuum annealing effects on the structural, optical and electrical properties of ITO films were investigated. Polycrystalline ITO films have been analyzed in wide optical spectrum, X-ray diffraction and four point probe methods. The results show that increasing the annealing temperature improves the crystallinity of the films. The resistivity of the deposited films is about 19×10-4 Ωcm and falls down to 7.3×10-5 Ωcm as the annealing temperature is increased to 500 °C in vacuum. |
| first_indexed | 2024-12-10T12:24:32Z |
| format | Article |
| id | doaj.art-bd5e13fa083d495283c63c49344a995c |
| institution | Directory Open Access Journal |
| issn | 1021-9986 1021-9986 |
| language | English |
| last_indexed | 2024-12-10T12:24:32Z |
| publishDate | 2009-06-01 |
| publisher | Iranian Institute of Research and Development in Chemical Industries (IRDCI)-ACECR |
| record_format | Article |
| series | Iranian Journal of Chemistry & Chemical Engineering |
| spelling | doaj.art-bd5e13fa083d495283c63c49344a995c2022-12-22T01:49:00ZengIranian Institute of Research and Development in Chemical Industries (IRDCI)-ACECRIranian Journal of Chemistry & Chemical Engineering1021-99861021-99862009-06-01282576113367Structural Properties of Post Annealed ITO Thin Films at Different TemperaturesNegin Manavizadeh0Alireza Khodayari1Ebrahim Asl Soleimani2Sheida Bagherzadeh3Mohammad Hadi Maleki4Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRANThin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRANThin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRANThin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRANNuclear Science and Technology Research Institute, Laser and Optics Research School, Tehran, I.R. IRANIndium tin oxide (ITO) thin films were deposited on glass substrates by RF sputtering using an ITO ceramic target (In2O3-SnO2, 90-10 wt. %). After deposition, samples were annealed at different temperatures in vacuum furnace. The post vacuum annealing effects on the structural, optical and electrical properties of ITO films were investigated. Polycrystalline ITO films have been analyzed in wide optical spectrum, X-ray diffraction and four point probe methods. The results show that increasing the annealing temperature improves the crystallinity of the films. The resistivity of the deposited films is about 19×10-4 Ωcm and falls down to 7.3×10-5 Ωcm as the annealing temperature is increased to 500 °C in vacuum.http://www.ijcce.ac.ir/article_13367_57e82bba5ea40f0a1abcca4c2b74c47f.pdfrf sputteringindium tin oxideannealing in vacuumtransparent conductive films |
| spellingShingle | Negin Manavizadeh Alireza Khodayari Ebrahim Asl Soleimani Sheida Bagherzadeh Mohammad Hadi Maleki Structural Properties of Post Annealed ITO Thin Films at Different Temperatures Iranian Journal of Chemistry & Chemical Engineering rf sputtering indium tin oxide annealing in vacuum transparent conductive films |
| title | Structural Properties of Post Annealed ITO Thin Films at Different Temperatures |
| title_full | Structural Properties of Post Annealed ITO Thin Films at Different Temperatures |
| title_fullStr | Structural Properties of Post Annealed ITO Thin Films at Different Temperatures |
| title_full_unstemmed | Structural Properties of Post Annealed ITO Thin Films at Different Temperatures |
| title_short | Structural Properties of Post Annealed ITO Thin Films at Different Temperatures |
| title_sort | structural properties of post annealed ito thin films at different temperatures |
| topic | rf sputtering indium tin oxide annealing in vacuum transparent conductive films |
| url | http://www.ijcce.ac.ir/article_13367_57e82bba5ea40f0a1abcca4c2b74c47f.pdf |
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