Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors
Abstract We studied the variation of photoresponsivity in multi-layer MoS2 phototransistors as the applied bias changes. The photoresponse gain is attained when the photogenerated holes trapped in the MoS2 attract electrons from the source. Thus, the photoresponsivity can be controlled by the gate o...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2017-11-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2368-2 |
| _version_ | 1797727952404742144 |
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| author | Jinwu Park Youngseo Park Geonwook Yoo Junseok Heo |
| author_facet | Jinwu Park Youngseo Park Geonwook Yoo Junseok Heo |
| author_sort | Jinwu Park |
| collection | DOAJ |
| description | Abstract We studied the variation of photoresponsivity in multi-layer MoS2 phototransistors as the applied bias changes. The photoresponse gain is attained when the photogenerated holes trapped in the MoS2 attract electrons from the source. Thus, the photoresponsivity can be controlled by the gate or drain bias. When the gate bias is below the threshold voltage, a small amount of electrons are diffused into the channel, due to large barrier between MoS2 and source electrode. In this regime, as the gate or drain bias increases, the barrier between the MoS2 channel and the source becomes lower and the number of electrons injected into the channel exponentially increases, resulting in an exponential increase in photoresponsivity. On the other hand, if the gate bias is above the threshold voltage, the photoresponsivity is affected by the carrier velocity rather than the barrier height because the drain current is limited by the carrier drift velocity. Hence, with an increase in drain bias, the carrier velocity increases linearly and becomes saturated due to carrier velocity saturation, and therefore, the photoresponsivity also increases linearly and becomes saturated. |
| first_indexed | 2024-03-12T11:06:46Z |
| format | Article |
| id | doaj.art-bd6010165d0a4b25a93964001a9cc5d6 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T11:06:46Z |
| publishDate | 2017-11-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-bd6010165d0a4b25a93964001a9cc5d62023-09-02T03:47:05ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-11-011211610.1186/s11671-017-2368-2Bias-dependent photoresponsivity of multi-layer MoS2 phototransistorsJinwu Park0Youngseo Park1Geonwook Yoo2Junseok Heo3Department of Electrical and Computer Engineering, Ajou UniversityDepartment of Electrical and Computer Engineering, Ajou UniversitySchool of Electronic Engineering, Soongsil UniversityDepartment of Electrical and Computer Engineering, Ajou UniversityAbstract We studied the variation of photoresponsivity in multi-layer MoS2 phototransistors as the applied bias changes. The photoresponse gain is attained when the photogenerated holes trapped in the MoS2 attract electrons from the source. Thus, the photoresponsivity can be controlled by the gate or drain bias. When the gate bias is below the threshold voltage, a small amount of electrons are diffused into the channel, due to large barrier between MoS2 and source electrode. In this regime, as the gate or drain bias increases, the barrier between the MoS2 channel and the source becomes lower and the number of electrons injected into the channel exponentially increases, resulting in an exponential increase in photoresponsivity. On the other hand, if the gate bias is above the threshold voltage, the photoresponsivity is affected by the carrier velocity rather than the barrier height because the drain current is limited by the carrier drift velocity. Hence, with an increase in drain bias, the carrier velocity increases linearly and becomes saturated due to carrier velocity saturation, and therefore, the photoresponsivity also increases linearly and becomes saturated.http://link.springer.com/article/10.1186/s11671-017-2368-2 |
| spellingShingle | Jinwu Park Youngseo Park Geonwook Yoo Junseok Heo Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors Nanoscale Research Letters |
| title | Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors |
| title_full | Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors |
| title_fullStr | Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors |
| title_full_unstemmed | Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors |
| title_short | Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors |
| title_sort | bias dependent photoresponsivity of multi layer mos2 phototransistors |
| url | http://link.springer.com/article/10.1186/s11671-017-2368-2 |
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