Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
Main Authors: | , , , , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2022-04-01
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Series: | Light: Science & Applications |
Online Access: | https://doi.org/10.1038/s41377-022-00802-y |
ISSN: | 2047-7538 |
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