Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2022-04-01
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| Series: | Light: Science & Applications |
| Online Access: | https://doi.org/10.1038/s41377-022-00802-y |
| _version_ | 1811338891263737856 |
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| author | Hongliang Chang Zhetong Liu Shenyuan Yang Yaqi Gao Jingyuan Shan Bingyao Liu Jingyu Sun Zhaolong Chen Jianchang Yan Zhiqiang Liu Junxi Wang Peng Gao Jinmin Li Zhongfan Liu Tongbo Wei |
| author_facet | Hongliang Chang Zhetong Liu Shenyuan Yang Yaqi Gao Jingyuan Shan Bingyao Liu Jingyu Sun Zhaolong Chen Jianchang Yan Zhiqiang Liu Junxi Wang Peng Gao Jinmin Li Zhongfan Liu Tongbo Wei |
| author_sort | Hongliang Chang |
| collection | DOAJ |
| first_indexed | 2024-04-13T18:17:19Z |
| format | Article |
| id | doaj.art-bd798da7db304b85bc82213e868ff581 |
| institution | Directory Open Access Journal |
| issn | 2047-7538 |
| language | English |
| last_indexed | 2024-04-13T18:17:19Z |
| publishDate | 2022-04-01 |
| publisher | Nature Publishing Group |
| record_format | Article |
| series | Light: Science & Applications |
| spelling | doaj.art-bd798da7db304b85bc82213e868ff5812022-12-22T02:35:38ZengNature Publishing GroupLight: Science & Applications2047-75382022-04-011111110.1038/s41377-022-00802-yAuthor Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diodeHongliang Chang0Zhetong Liu1Shenyuan Yang2Yaqi Gao3Jingyuan Shan4Bingyao Liu5Jingyu Sun6Zhaolong Chen7Jianchang Yan8Zhiqiang Liu9Junxi Wang10Peng Gao11Jinmin Li12Zhongfan Liu13Tongbo Wei14Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of SciencesCenter for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking UniversityCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of SciencesResearch and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of SciencesCenter for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking UniversityCenter for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking UniversityBeijing graphene institute (BGI)Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking UniversityResearch and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of SciencesResearch and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of SciencesResearch and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of SciencesCenter for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking UniversityResearch and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of SciencesCenter for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking UniversityResearch and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Scienceshttps://doi.org/10.1038/s41377-022-00802-y |
| spellingShingle | Hongliang Chang Zhetong Liu Shenyuan Yang Yaqi Gao Jingyuan Shan Bingyao Liu Jingyu Sun Zhaolong Chen Jianchang Yan Zhiqiang Liu Junxi Wang Peng Gao Jinmin Li Zhongfan Liu Tongbo Wei Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode Light: Science & Applications |
| title | Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode |
| title_full | Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode |
| title_fullStr | Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode |
| title_full_unstemmed | Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode |
| title_short | Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode |
| title_sort | author correction graphene driving strain engineering to enable strain free epitaxy of aln film for deep ultraviolet light emitting diode |
| url | https://doi.org/10.1038/s41377-022-00802-y |
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