Cryogenic Controller for Electrostatically Controlled Quantum Dots in 22-nm Quantum SoC

We present a fully integrated cryogenic controller for electrostatically controlled quantum dots (QDs) implemented in a commercial 22-nm fully depleted silicon-on-insulator CMOS process and operating in a quantum regime. The QDs are realized in local well areas of transistors separated by tunnel bar...

Full description

Bibliographic Details
Main Authors: Robert Bogdan Staszewski, Ali Esmailiyan, Hongying Wang, Eugene Koskin, Panagiotis Giounanlis, Xutong Wu, Anna Koziol, Andrii Sokolov, Imran Bashir, Mike Asker, Dirk Leipold, Reza Nikandish, Teerachot Siriburanon, Elena Blokhina
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Open Journal of the Solid-State Circuits Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9915422/
_version_ 1827276336305012736
author Robert Bogdan Staszewski
Ali Esmailiyan
Hongying Wang
Eugene Koskin
Panagiotis Giounanlis
Xutong Wu
Anna Koziol
Andrii Sokolov
Imran Bashir
Mike Asker
Dirk Leipold
Reza Nikandish
Teerachot Siriburanon
Elena Blokhina
author_facet Robert Bogdan Staszewski
Ali Esmailiyan
Hongying Wang
Eugene Koskin
Panagiotis Giounanlis
Xutong Wu
Anna Koziol
Andrii Sokolov
Imran Bashir
Mike Asker
Dirk Leipold
Reza Nikandish
Teerachot Siriburanon
Elena Blokhina
author_sort Robert Bogdan Staszewski
collection DOAJ
description We present a fully integrated cryogenic controller for electrostatically controlled quantum dots (QDs) implemented in a commercial 22-nm fully depleted silicon-on-insulator CMOS process and operating in a quantum regime. The QDs are realized in local well areas of transistors separated by tunnel barriers controlled by voltages applied to gate terminals. The QD arrays (QDA) are co-located with the control circuitry inside each quantum experiment cell, with a total of 28 of such cells comprising this system-on-chip (SoC). The QDA structure is controlled by small capacitive digital-to-analog converters (CDACs) and its quantum state is measured by a single-electron detector. The SoC operates at a cryogenic temperature of 3.4K. The occupied area of each QDA is <inline-formula> <tex-math notation="LaTeX">$0.7 \times 0.4\mu \text{m}^2$ </tex-math></inline-formula>, while each QD occupies only <inline-formula> <tex-math notation="LaTeX">$20 \times 80 \text{nm}^2$ </tex-math></inline-formula>. The low power and miniaturized area of these circuits are an important step on the way for integration of a large quantum core with millions of QDs, required for practical quantum computers. The performance and functionality of the CDAC are validated in a loop-back mode with the detector sensing the CDAC-compelled electron tunneling from the quantum point contact (QPC) node into the quantum structure. The position of the injected charge inside the QDA is intended to be controlled through the CDAC codes and programmable pulse width. Quantum effects are shown by an experimental characterization of charge injection and quantization into the QDA consisting of three coupled QDs. The charge can be transferred to a QD and sensed at the QPC, and this process is controlled by the relevant voltages and CDACs.
first_indexed 2024-04-24T06:43:37Z
format Article
id doaj.art-bd84d25b95ac44d7a6ebc980fcea91b8
institution Directory Open Access Journal
issn 2644-1349
language English
last_indexed 2024-04-24T06:43:37Z
publishDate 2022-01-01
publisher IEEE
record_format Article
series IEEE Open Journal of the Solid-State Circuits Society
spelling doaj.art-bd84d25b95ac44d7a6ebc980fcea91b82024-04-22T20:40:14ZengIEEEIEEE Open Journal of the Solid-State Circuits Society2644-13492022-01-01210312110.1109/OJSSCS.2022.32135289915422Cryogenic Controller for Electrostatically Controlled Quantum Dots in 22-nm Quantum SoCRobert Bogdan Staszewski0https://orcid.org/0000-0001-9848-1129Ali Esmailiyan1Hongying Wang2Eugene Koskin3Panagiotis Giounanlis4Xutong Wu5Anna Koziol6Andrii Sokolov7Imran Bashir8https://orcid.org/0000-0002-7404-6920Mike Asker9Dirk Leipold10Reza Nikandish11Teerachot Siriburanon12Elena Blokhina13https://orcid.org/0000-0002-4164-4350School of Electrical and Electronic Engineering, University College Dublin, Belfield, IrelandEqual1 Labs Ltd., Belfield, IrelandEqual1 Labs Ltd., Belfield, IrelandEqual1 Labs Ltd., Belfield, IrelandEqual1 Labs Ltd., Belfield, IrelandSchool of Electrical and Electronic Engineering, University College Dublin, Belfield, IrelandEqual1 Labs Ltd., Belfield, IrelandEqual1 Labs Ltd., Belfield, IrelandEqual1 Labs Inc., Fremont, CA, USAEqual1 Labs Inc., Fremont, CA, USAEqual1 Labs Inc., Fremont, CA, USASchool of Electrical and Electronic Engineering, University College Dublin, Belfield, IrelandSchool of Electrical and Electronic Engineering, University College Dublin, Belfield, IrelandSchool of Electrical and Electronic Engineering, University College Dublin, Belfield, IrelandWe present a fully integrated cryogenic controller for electrostatically controlled quantum dots (QDs) implemented in a commercial 22-nm fully depleted silicon-on-insulator CMOS process and operating in a quantum regime. The QDs are realized in local well areas of transistors separated by tunnel barriers controlled by voltages applied to gate terminals. The QD arrays (QDA) are co-located with the control circuitry inside each quantum experiment cell, with a total of 28 of such cells comprising this system-on-chip (SoC). The QDA structure is controlled by small capacitive digital-to-analog converters (CDACs) and its quantum state is measured by a single-electron detector. The SoC operates at a cryogenic temperature of 3.4K. The occupied area of each QDA is <inline-formula> <tex-math notation="LaTeX">$0.7 \times 0.4\mu \text{m}^2$ </tex-math></inline-formula>, while each QD occupies only <inline-formula> <tex-math notation="LaTeX">$20 \times 80 \text{nm}^2$ </tex-math></inline-formula>. The low power and miniaturized area of these circuits are an important step on the way for integration of a large quantum core with millions of QDs, required for practical quantum computers. The performance and functionality of the CDAC are validated in a loop-back mode with the detector sensing the CDAC-compelled electron tunneling from the quantum point contact (QPC) node into the quantum structure. The position of the injected charge inside the QDA is intended to be controlled through the CDAC codes and programmable pulse width. Quantum effects are shown by an experimental characterization of charge injection and quantization into the QDA consisting of three coupled QDs. The charge can be transferred to a QD and sensed at the QPC, and this process is controlled by the relevant voltages and CDACs.https://ieeexplore.ieee.org/document/9915422/Capacitive DAC (CDAC)charge qubitscryo-CMOSfully depleted silicon-on-insulator (FD-SOI)imposerposition-based qubits
spellingShingle Robert Bogdan Staszewski
Ali Esmailiyan
Hongying Wang
Eugene Koskin
Panagiotis Giounanlis
Xutong Wu
Anna Koziol
Andrii Sokolov
Imran Bashir
Mike Asker
Dirk Leipold
Reza Nikandish
Teerachot Siriburanon
Elena Blokhina
Cryogenic Controller for Electrostatically Controlled Quantum Dots in 22-nm Quantum SoC
IEEE Open Journal of the Solid-State Circuits Society
Capacitive DAC (CDAC)
charge qubits
cryo-CMOS
fully depleted silicon-on-insulator (FD-SOI)
imposer
position-based qubits
title Cryogenic Controller for Electrostatically Controlled Quantum Dots in 22-nm Quantum SoC
title_full Cryogenic Controller for Electrostatically Controlled Quantum Dots in 22-nm Quantum SoC
title_fullStr Cryogenic Controller for Electrostatically Controlled Quantum Dots in 22-nm Quantum SoC
title_full_unstemmed Cryogenic Controller for Electrostatically Controlled Quantum Dots in 22-nm Quantum SoC
title_short Cryogenic Controller for Electrostatically Controlled Quantum Dots in 22-nm Quantum SoC
title_sort cryogenic controller for electrostatically controlled quantum dots in 22 nm quantum soc
topic Capacitive DAC (CDAC)
charge qubits
cryo-CMOS
fully depleted silicon-on-insulator (FD-SOI)
imposer
position-based qubits
url https://ieeexplore.ieee.org/document/9915422/
work_keys_str_mv AT robertbogdanstaszewski cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT aliesmailiyan cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT hongyingwang cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT eugenekoskin cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT panagiotisgiounanlis cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT xutongwu cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT annakoziol cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT andriisokolov cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT imranbashir cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT mikeasker cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT dirkleipold cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT rezanikandish cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT teerachotsiriburanon cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc
AT elenablokhina cryogeniccontrollerforelectrostaticallycontrolledquantumdotsin22nmquantumsoc