Weak-antilocalization and surface dominated transport in topological insulator Bi2Se2Te
We explore the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films were found to be of good quality. We carried out extensive mag...
Main Authors: | Radha Krishna Gopal, Sourabh Singh, Ramesh Chandra, Chiranjib Mitra |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2015-04-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4917455 |
Similar Items
-
Topological delocalization and tuning of surface channel separation in Bi2Se2Te Topological Insulator Thin films
by: Radha Krishna Gopal, et al.
Published: (2017-07-01) -
Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness
by: Sudhanshu Gautam, et al.
Published: (2022-06-01) -
Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films
by: Gregory M. Stephen, et al.
Published: (2020-03-01) -
Topological quantum weak antilocalization limit and anomalous Hall effect in semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey heterostructure
by: Moorthi Kanagaraj, et al.
Published: (2019-01-01) -
Weak Antilocalization in Polycrystalline SnTe Films Deposited by Magnetron Sputtering
by: Xiaodong Li, et al.
Published: (2022-05-01)